The contact resistance between a metal electrode and silicon is one of the important factors which influence solar cell fill factor, short circuit current and electro-optic conversion efficiency. By optimizing the sintering technique of crystal silicon solar cell, the platform-based sintering temperature curve with steep is replaced by the sintering temperature curve. The Core Scan method is used to test the contact resistance Rc between sintering silver electrode of crystal silicon solar cell and silicon before and after technique optimizing process. And IV characteristic battery plate is tested before and after technique optimizing process. The test results show that the optimized sintering technique can reduce the contact resistance between silver electrode and silicon. So electro-optic conversion efficiency of solar cell is improved. The platform-based sintering temperature curve is much more suitable for high efficiency shallow junction silicon cell structure.