Chalcogenide glasses can be melted in a completely oxygen-free environment, but the effect of trace amount of oxygen on the specific properties of chalcogenide glasses is still a challenge. To investigate the effect of trace-oxide components of Se-H impurities in As-Se glass system, SeO2 and Ge were introduced for H and O impurities in the multi-processes of dynamic-vacuum distillation. The results indicate that the co-doping of SeO2 (i.e., 2×10-3) can lead to the decrease of Se-H content in As2Se3 bulk glasses, although As-O and Se-O impurities increase. When the content of SeO2 increases to 10-2, the absorbing intensities of As-O and Se-O impurities increase. For the preparation of Ge-As-Se glass with low Se-H impurities, the more content of SeO2 is needed. The introduction of Ge can weaken the efficiency of SeO2 for eliminating Se-H impurities. If the Se-H impurities decrease to beyond a detecting limit of the FTIR in Ge-As-Se glasses, the more content of SeO2 is needed for the compensation. This work provides a method for further clarifying the sources of impurities in chalcogenide glasses and the preparation of low-hydroxy chalcogenide glass fibers.