• Chinese Journal of Lasers
  • Vol. 31, Issue 4, 477 (2004)
[in Chinese]*, [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Design of 193 nm Optical Thin Films under Practical Structure and Optical Parameters[J]. Chinese Journal of Lasers, 2004, 31(4): 477 Copy Citation Text show less
    References

    [3] 3 Guy Davies, Judon Stoeldraijer, Barbra Heskamp et al.. 193 nm Step and Scan Lithography [C]. SEMI Technology Symposium 98, Makuhari Messe, Chiba, Japan. 1~15

    [4] 4 Glen P. Callahan, Bruce K. Flint. Characteristics of deep UV optics at 193 nm & 157 nm [C]. SPIE, 1998, 3578:45~53

    [5] 5 Philippe Torchio, Alexandre Gatto, Marco Alvisi et al.. High-reflectivity HfO2/SiO2 ultraviolet mirrors [J]. Appl. Opt., 2002, 41(16):3256~3261

    [8] 8 J. O. Porteus. Relation between the height distribution of a rough surface and the reflectance at normal incidence [J]. J. Opt. Soc. Am., 1963, 53(12):1394~1402

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Design of 193 nm Optical Thin Films under Practical Structure and Optical Parameters[J]. Chinese Journal of Lasers, 2004, 31(4): 477
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