Epitaxial growth of As-doped HgCdTe is essential of HOT infrared (IR) detector and helpful to suppress dark currents at high temperature. Segregation coefficients for incorporating As employing Te-rich liquid phase epitaxy (LPE) are very low, thus concentration of As in the HgCdTe film grown by LPE is very low (about 1015 cm-3). Though a portion of the total As do not appear to be activated as acceptors, As is fully activated as an acceptor(AsTe) under Hg-saturated conditions. As-doped HgCdTe films are obtained by Te-rich LPE, and after annealing at 400 ℃ in Hg-rich ambient, and P-type HgCdTe films are obtained. The concentration of As is determined by secondary ion mass spectroscopy (SIMS). The Hall effect and resistivity are measured in the temperature range between 10 and 300 K. Electrical properties of As-doped HgCdTe film are reported.