Ps light pulse generation by gain modulation of unbiased InGaAsP laser at 1.3 μm

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 20 >Issue 1 >Page 16 > Article

Chinese Journal of Lasers
Vol. 20, Issue 1, 16 (1993)

Ps light pulse generation by gain modulation of unbiased InGaAsP laser at 1.3 μm

[in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Ps light pulse generation by gain modulation of unbiased InGaAsP laser at 1.3 μm[J]. Chinese Journal of Lasers, 1993, 20(1): 16 Copy Citation Text

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Abstract

The kinetics of generating picesecond light pulses by gain modulation of semiconductor laser is analysed based on nonlinear rate-equations. Special double avalanche pulse generators are designed to produce short injection-current pulses. The optical pulse of 15 ps (FWHM) is obtained by gain modulation of unbised InGaAsP lasers.

Keywords

gain modulation semiconductor laser picosecond light pulse

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Ps light pulse generation by gain modulation of unbiased InGaAsP laser at 1.3 μm[J]. Chinese Journal of Lasers, 1993, 20(1): 16

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