• Infrared Technology
  • Vol. 45, Issue 6, 559 (2023)
Dong YANG1,2,3, Jun SHEN1,3, Kaicong GAO1, Chongqian LENG1..., Changbin NIE1 and Zhisheng ZHANG1,*|Show fewer author(s)
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    DOI: Cite this Article
    YANG Dong, SHEN Jun, GAO Kaicong, LENG Chongqian, NIE Changbin, ZHANG Zhisheng. Infrared Response of Lead Sulfide Detector Synthesized from Chemical Bath Deposition[J]. Infrared Technology, 2023, 45(6): 559 Copy Citation Text show less
    References

    [2] SHI L L, LIANG Q B, WANG W Y, et al. Research progress in organic photomultiplication photodetectors[J]. Nanomaterials (Basel), 2018, 8(9): 713.

    [7] DIEZHANDINO J, VERGARA G, PEREZ G, et al. Monolithic integration of spectrally selective uncooled lead selenide detectors for low cost applications[J]. Applied Physics Letters, 2003, 83(14): 2751-2753.

    [8] VERGARA G, LINARES HERRERO R, GUTíERREZ áLVAREZ R, et al. 80×80 VPD PbSe: the first uncooled MWIR FPA monolithically integrated with a Si-CMOS ROIC[C]//Pro. of SPIE, 2013, 8704: 87041M.

    [9] WENG B B, QIU J J, ZHAO L H, et al. Recent development on the uncooled mid-infrared PbSe detectors with high detectivity[C]// Pro. of SPIE, 2013, 8993: 899311.

    [10] KONSTANTATOS G, CLIFFORD J, LEVINA L, et al. Sensitive solution-processed visible-wavelength photodetectors[J]. Nature Photonics, 2007, 1(9): 531-534.

    [11] MI L F, CHANG Y J, ZHANG Y, et al. Hybrid perovskite exchange of PbS quantum dots for fast and high-detectivity visible-near-infrared photo-detectors[J]. Journal of Materials Chemistry C, 2020, 8(23): 7812-7819.

    [12] YAN S Y, YANG Q, FENG S L, et al. Effect of air atmosphere sensitization on formation of PbSe p-n junctions for high-performance photodetectors[J]. Journal of Electronic Materials, 2020, 49(8): 4929-4935.

    [13] DONG R, BI C, DONG Q F, et al. An Ultraviolet-to-NIR broad spectral nanocomposite photodetector with gain[J]. Advanced Optical Materials, 2014, 2(6): 549-554.

    [14] KUFER D, LASANTA T, BERNECHEA M, et al. Interface engineering in hybrid quantum dot-2D phototransistors[J]. Acs Photonics, 2016, 3(7): 1324-1330.

    [15] SONG X X, ZHANG Y T, ZHANG H T, et al. Graphene and PbS quantum dot hybrid vertical phototransistor[J]. Nanotechnology, 2017, 28(14): 145201.

    [16] KONSTANTATOS G. SARGENT E H. PbS colloidal quantum dot photoconductive photodetectors: Transport, traps, and gain[J]. Applied Physics Letters, 2007, 91(17): 173505.

    [17] LAUER R B. WILLIAMS F. Photoelectronic properties of graded composition crystals of Ii-Vi semiconductors[J]. Journal of Applied Physics, 1971, 42(7): 2904-2910.

    [18] BUSCEMA M, ISLAND J O, GROENENDIJK D J, et al. Photocurrent generation with two-dimensional van der Waals semiconductors[J]. Chemical Society Reviews, 2015, 44(11): 3691-3718.

    [19] KONSTANTATOS G, BADIOLI M, GAUDREAU L, et al. Hybrid graphene-quantum dot phototransistors with ultrahigh gain[J]. Nat Nanotechnol, 2012, 7(6): 363-368.

    [20] KONSTANTATOS G. SARGENT E H. Solution-processed quantum dot photodetectors[C]//Proceedings of IEEE, 2009, 97(10): 1666-1683.

    YANG Dong, SHEN Jun, GAO Kaicong, LENG Chongqian, NIE Changbin, ZHANG Zhisheng. Infrared Response of Lead Sulfide Detector Synthesized from Chemical Bath Deposition[J]. Infrared Technology, 2023, 45(6): 559
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