Effect of growth interruption time on the quality of InAs/GaSb type-II superlattice grown by molecular beam epitaxy

Zhaojun LIU; Lianqing ZHU; Xiantong ZHENG; Lidan LU; Dongliang ZHANG; Yuan and LIU

doi:10.1007/s11801-023-2196-9

[1] JASIK A, SANKOWSKA I, PIERSCINSKA D, et al. Blueshift of bandgap energy and reduction of non-radiative defect density due to precise control of InAs-on-GaSb interface in type-II InAs/GaSb superlattice[J]. Journal of applied physics, 2011, 110(12): 123103.

[2] KLEIN B, NUTAN G, ELENA P, et al. Carrier lifetime studies in midwave infrared type-II InAs/GaSb strained layer superlattice[J]. Journal of vacuum science & technology B, 2014, 32(2): 02C101.

[3] ALSHAHRANI D O, KESARIA M, ANYEBE E A, et al. Emerging type-II superlattices of InAs/InAsSb and InAs/GaSb for mid-wavelength infrared photodetectors[J]. Advanced photonics research, 2021, 3(2).

[4] RODRIGUEZ J B, CHRISTOL P, CERUTTI L, et al. MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection[J]. Journal of crystal growth, 2005, 274(1-2): 6-13.

[5] MAGRI R, ZUNGER A. Effects of interfacial atomic segregation and intermixing on the electronic properties of InAs/GaSb superlattices[J]. Physical review B, 2002, 65(16): 5302.

[6] LI H, ZHANG Q, QI X, et al. High resolution X-ray diffraction study in InAs/GaSb superlattice[J]. Ferroelectrics, 2022, 596(1): 86-94.

[7] YU H L, WU H Y, ZHU H J, et al. Molecular beam epitaxy of zero lattice-mismatch InAs/GaSb type-II superlattice[J]. Chinese physics letters, 2016, 33(12): 128103.

[8] SU D H, XU Y, WANG W X, et al. Growth control of high-performance InAs/GaSb type-II superlattices via optimizing the In/Ga beam-equivalent pressure ratio[J]. Chinese physics letters, 2020, 37(3): 037301.

[9] : WEI Y, MA W Q, ZHANG Y H, et al. High structural quality of type II InAs/GaSb superlattices for very long wavelength infrared detection by interface control[J]. IEEE journal of quantum electronics, 2012, 48(4): 512-515.

[10] LI B, NIU Y X, FENG Y D, et al. Ultra-low dark count InGaAs/InP single photon avalanche diode[J]. Optoelectronics letters, 2022, 18(11): 647-650.

[11] LI X C, JIANG D W, ZHANG Y, et al. Interface optimization and fabrication of InAs/GaSb type II superlattice for very long wavelength infrared photodetectors[J]. Superlattices and microstructures, 2016, 91: 238-243.

[12] LIU Y F, ZHANG C J, WANG X B, et al. Interface investigation of InAs/GaSb type II superlattice for long wavelength infrared photodetectors[J]. Infrared physics & technology, 2021, 113.

[13] XU Z C, CHEN J X, WANG F F, et al. Interface layer control and optimization of InAs/GaSb type-IIsuperlattices grown by molecular beam epitaxy[J]. Journal of crystal growth, 2014, 386: 220-225.

[14] DELMAS M, DEBNATH M C, LIANG B L, et al. Material and device characterization of type-II InAs/GaSb superlattice infrared detectors[J]. Infrared physics & technology, 2018, 94: 286-290.

[15] QIAO P F, MOU S, CHUANG S L. Electronic band structures and optical properties of type-II superlattice photodetectors with interfacial effect[J]. Optics express, 2012, 20(3): 2319-2334.

[16] LI C L, FANG D, ZHANG J, et al. Surface morphologies of InAs/GaSb type-II superlattice materials obtained via growth interruption method[J]. Acta optica sinica, 2019, 39(9): 286-290. (in Chinese)

[17] JIANG J K, LI Y, CHANG F R, et al. MBE growth of mid-wavelength infrared photodetectors based on high quality InAs/AlAs/InAsSb superlattice[J]. Journal of crystal growth, 2021, 564(15): 126109.

[18] LIU Z J, ZHU L Q, ZHENG X T, et al. Interface effect on superlattice quality and optical properties of InAs/GaSb type-II superlattices grown by molecular beam epitaxy[J]. Chinese physics B, 2022, 31: 128503.

[19] SHAO J, LU W, LU X, et al. Modulated photoluminescence spectroscopy with a step-scan Fourier transform infrared spectrometer[J]. Review of scientific instruments, 2006, 77: 063104.