• Acta Photonica Sinica
  • Vol. 40, Issue 2, 199 (2011)
[in Chinese]*, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Fabrication of Inverted Bottom Organic Light-emitting Device with Li3N n-type Doping Electron Injecting Layer[J]. Acta Photonica Sinica, 2011, 40(2): 199 Copy Citation Text show less
    References

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    [4] RIE W, BEIERLEIN TA, RIEL H, Optimizing OLED structures for a-Si display applications via combinatorial methods and enhanced outcoupling[J]. Physica Status Solidi, 2004, 201(6):1360-1371.

    [5] YANG Hui-shan, CHENG Jia-li, ZHAO Yi, et al. Improved efficiency of organic light-emitting devices utilizing doped in the electron-transporting layer[J]. Acta Photonica Sinica, 2004, 33(11): 1364-1366.

    [6] ZHOU X, PFEIFFER M, HUANG J S, et al. Low-voltage inverted transparent vacuum deposited organic light-emitting diodes using electrical doping[J]. Applied Physics Letters, 2002, 81(5): 922.1-922.3.

    [7] CHU T Y, CHEN J F, CHEN S Y, et al. Highly efficient and stable inverted bottom-emission organic light emitting devices[J]. Applied Physics Letters, 2006, 89(5): 053503.1-3.

    [8] CHEN S Y, CHU T Y, CHEN J F, et al. Stable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvement[J]. Applied Physics Letters, 2006, 89(5): 053518.1-3.

    [9] HUANG J, HOU W J, LI J H, et al. Improving the power efficiency of white light-emitting diode by doping electron transport material[J]. Applied Physics Letters, 2006, 89(13): 133509.13.

    [10] TAO Xiong, WANG Feng-xia, QIAO Xian-feng, et al. Cesium hydroxide doped tris-(8-hydroxyquinoline) aluminum,as an effective electron injection layer in inverted bottom-emission organic light emitting diodes[J]. Applied Physics Letters, 2008, 92(26): 263305.1-3.

    [11] WANG Feng-xia, TAO Xiong, QIAO Xian-feng, et al. Origin of improvement in device performance via the modification role of cesium hydroxide doped tris(8-hydroxyquinoline) aluminum interfacial layer on ITO cathode in inverted bottom-emission organic light-emitting diodes[J]. Organic Electronics, 2009, 10(2): 266–274.

    [12] LI Chuan-nan, LI Tao, LI Ai-wu, et al. Perfomance enhanced OLEDs using a Li3N doped tris(8-hydroxyquingoline)Aluminum(Alq3) thin film as electron-injecting and transporting layer[C]. The International Symposium on Photonics and Optoelectronics (SOPO) 2010 Conference, Chengdu, China. June 19-21st, 2010.

    [13] XIE Guo-hua, MENG Yan-long. Very low turn-on voltage and high brightness tris-(8-hydroxyquinoline) aluminum-based organic light-emitting diodes with a MoOx p-doping layer[J]. Applied Physics Letters, 2008, 92(9): 093305.1-3.

    [14] LI Chuan-nan, XIAO Bu-wen, HOU Jing-ying, et al. Fabrication of organic light-emitting devices using LiF/Al as cathode, layer[J]. Acta Photonica Sinica, 2001, 30(1):86-89.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Fabrication of Inverted Bottom Organic Light-emitting Device with Li3N n-type Doping Electron Injecting Layer[J]. Acta Photonica Sinica, 2011, 40(2): 199
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