31.38 Gb/s GaN-based LED array visible light communication system enhanced with V-pit and sidewall quantum well structure

Zengyi Xu; Wenqing Niu; Yu Liu; Xianhao Lin; Jifan Cai; Jianyang Shi; Xiaolan Wang; Guangxu Wang; Jianli Zhang; Fengyi Jiang; Zhixue He; Shaohua Yu; Chao Shen; Junwen Zhang; Nan Chi

doi:10.29026/oes.2023.230005

Journals >Opto-Electronic Science >Volume 2 >Issue 5 >Page 230005 > Article

Opto-Electronic Science
Vol. 2, Issue 5, 230005 (2023)

31.38 Gb/s GaN-based LED array visible light communication system enhanced with V-pit and sidewall quantum well structure

Zengyi Xu, Wenqing Niu, Yu Liu, Xianhao Lin, Jifan Cai, Jianyang Shi, Xiaolan Wang, Guangxu Wang, Jianli Zhang, Fengyi Jiang, Zhixue He, Shaohua Yu, Chao Shen, Junwen Zhang, and Nan Chi^*

DOI: 10.29026/oes.2023.230005 Cite this Article

Zengyi Xu, Wenqing Niu, Yu Liu, Xianhao Lin, Jifan Cai, Jianyang Shi, Xiaolan Wang, Guangxu Wang, Jianli Zhang, Fengyi Jiang, Zhixue He, Shaohua Yu, Chao Shen, Junwen Zhang, Nan Chi. 31.38 Gb/s GaN-based LED array visible light communication system enhanced with V-pit and sidewall quantum well structure[J]. Opto-Electronic Science, 2023, 2(5): 230005 Copy Citation Text

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[30] Linnartz JPMG, Deng X, Alexeev A, van Voorthuisen P. An LED communication model based on carrier recombination in the quantum well. In2021 IEEE 32nd Annual International Symposium on Personal, Indoor and Mobile Radio Communications (PIMRC): 1–6 (IEEE, 2021); http://doi.org/10.1109/PIMRC50174.2021.9569261.

[34] Wu XM. Study on the luminescence properties of V-pit-containing GaN based blue LEDs on Si substrates (Nanchang University, Nanchang, 2014).

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