Effects of crystallization kinetics on the dielectric and electrical properties of BiFeO3films

Y. González-Abreu; S. P. Reis; F. E. Freitas; J. A. Eiras; E. B. Araújo

doi:10.1142/S2010135X21400075

[1] WangJ.,NeatonJ. B.,ZhengH.,NagarajanV.,OgaleS. B.,LiuB.,ViehlandD.,VaithyanathanV.,SchlomD. G.,WaghmareU. V.,SpaldinN. A.,RabeK. M.,WuttigM. andRameshR.,Epitaxial BiFeO3 multiferroic thin film heterostructures,Science299,1719(2003).

[2] CatalanG. andScottJ. F.,Physics and applications of bismuth ferrite,Adv. Mater.21,2463(2009).

[3] ZhaoT.,SchollA.,ZavalicheF.,LeeK.,BarryM.,DoranA.,CruzM. P.,ChuY. H.,EdererC.,SpaldinN. A.,DasR. R.,KimD. M.,BaekS. H.,EomC. B. andRameshR.,Electrical control of antiferromagnetic domains in multiferroic BiFeO3 films at room temperature,Nat. Mater.5,823(2006).

[4] NeatonJ. B.,EdererC.,WaghmareU. V.,SpaldinN. A. andRabeK. M.,First-principles study of spontaneous polarization in multiferroic BiFeO3,Phys. Rev. B71,014113(2005).

[5] SandoD.,BarthélémyA. andBibesM.,BiFeO3 epitaxial thin films and devices: Past, present and future,J. Phys.: Condens. Matter26,473201(2014).

[6] LebeugleD.,ColsonD.,ForgetA. andViretM.,Very large spontaneous electric polarization in BiFeO3 single crystals at room temperature and its evolution under cycling fields,Appl. Phys. Lett.91,022907(2007).

[7] ShvartsmanV. V.,KleemannW.,HaumontR. andKreiselJ.,Large bulk polarization and regular domain structure in ceramic BiFeO3,Appl. Phys. Lett.90,172115(2007).

[8] WuJ.,FanZ.,XiaoD.,ZhuJ. andWangJ.,Multiferroic bismuth ferrite-based materials for multifunctional applications: Ceramic bulks, thin films and nanostructures,Progr. Mater. Sci.84,335(2016).

[9] ShuaiY.,OuX.,WuC.,ZhangW.,ZhouS.,BürgerD.,ReutherH.,SlesazeckS.,MikolajickT.,HelmM. andSchmidtH.,Substrate effect on the resistive switching in BiFeO3 thin films,J. Appl. Phys.111,07D906(2012).

[10] PalaiR.,KatiyarR. S.,SchmidH.,TissotP.,ClarkS. J.,RobertsonJ.,RedfernS. A. T.,CatalanG. andScottJ. F.,β phase and γ-β metal-insulator transition in multiferroic BiFeO3,Phys. Rev. B77,014110(2008).

[11] MoubahR.,SchmerberG., O Rousseau,ColsonD. andViretM.,Photoluminescence investigation of defects and optical band gap in multiferroic BiFeO3 single crystals,Appl. Phys. Exp.5,035802(2012).

[12] IlićN. I.,DžunuzovićA. S.,BobićJ. D.,StojadinovićBojan S.,HammerP.,Vijatović PetrovićM. M.,Dohčević-MitrovićZ. D. andStojanovićB. D.,Structure and properties of chemically synthesized BiFeO3. Influence of fuel and complexing agent,Ceram. Int.41,69(2015).

[13] EdererC. andSpaldinN. A.,Influence of strain and oxygen vacancies on the magnetoelectric properties of multiferroic bismuth ferrite,Phys. Rev. B71,1(2005).

[14] GaoT.,ChenZ.,NiuF.,ZhouD.,HuangQ.,ZhuY.,QinL.,SunX. andHuangY.,Shape-controlled preparation of bismuth ferrite by hydrothermal method and their visible-light degradation properties,J. Alloys Compd.648,564(2015).

[15] GenesteG.,PaillardCh. andDkhilB.,Polarons, vacancies, vacancy associations, and defect states in multiferroic BiFeO3,Phys. Rev. B99,024104(2019).

[16] TchelidzeT.,GagnidzeT. andShengelayaA.,Thermodynamic analysis of defect formation in BiFeO3,Phys. Stat. Solidi C12,117(2015).

[17] QiX.,DhoJ.,TomovR.,BlamireM. G. andMacManus-DriscollJ. L.,Greatly reduced leakage current and conduction mechanism in aliovalent-ion-doped BiFeO3,Appl. Phys. Lett.86,062903(2005).

[18] HuG. D.,FanS. H.,YangC. H. andWuW. B.,Low leakage current and enhanced ferroelectric properties of Ti and Zn codoped BiFeO3 thin film,Appl. Phys. Lett.92,192905(2008).

[19] YangH.,WangY. Q.,WangH. andJiaQ. X.,Oxygen concentration and its effect on the leakage current in BiFeO3 thin films,Appl. Phys. Lett.96,012909(2010).

[20] WangY. andWangJ.,Modulated charged defects and conduction behaviour in doped BiFeO3,J. Phys. D: Appl. Phys.42,162001(2009).

[21] MarkiewiczE.,HilczerB.,BłaszykM.,PietraszkoA. andTalikE.,Dielectric properties of BiFeO3 ceramics obtained from mechanochemically synthesized nanopowders,J. Electroceram.27,154(2011).

[22] KeSh.,LinP., X Zeng,HuangH.,ZhouL. M. andMaiY.-W.,Tuning of dielectric and ferroelectric properties in single phase BiFeO3 ceramics with controlled Fe2+/Fe3+ ratio,Ceram. Int.40,5263(2014).

[23] MoreauJ.,MichelC.,GersonR. andJamesW.,Ferroelectric BiFeO3 X-ray and neutron diffraction study,J. Phys. Chem. Solids32,1315(1971).

[24] MukherjeeS.,SrivastavaA.,GuptaR. andGargA.,Suppression of grain boundary relaxation in Zr-doped BiFeO3 thin films,J. Appl. Phys.115,204102(2014).

[25] JonscherA. K.,Dielectric Relaxation in Solids(Chelsea Dielectrics,London,1983).

[26] WangT.,HuJ.,YangH.,JinL.,WeiX.,LiC.,YanF. andLinY.,Dielectric relaxation and Maxwell-Wagner interface polarization in Nb2O5 doped 0.65BiFeO3-0.35BaTiO3 ceramics,J. App. Phys.121,084103(2017).

[27] MaY.,ChenX. M. andLinY. Q.,Relaxor like dielectric behavior and weak ferromagnetism in YFeO3 ceramics,J. Appl. Phys.103,124111-1(2008).

[28] AngC.,YuZ. andCrossL. E.,Oxygen-vacancy-related low frequency dielectric relaxation and electrical conduction in Bi:SrTiO3,Phys. Rev. B62,228(2000).

[29] GregoriG.,MerkleR. andMaierJ.,Ion conduction and redistribution at grain boundaries in oxide systems,Progr. Mater. Sci.89,252(2017).

[30] KimS. andMaierJ.,On the conductivity mechanism of nanocrystalline ceria,J. Electrochem. Soc.149,J73(2002).

[31] MatsuoaH.,KitanakaY.,NoguchiY. andMiyayamaM.,Electrical conduction mechanism in BiFeO3-based ferroelectric thin-film capacitors: Impact of Mn doping,J. Asian Ceram. Soc.3,426(2015).

[32] ZhengR. Y.,SimC. H. andWangwJ.,Effects of SRO buffer layer on multiferroic BiFeO3 thin films,J. Am. Ceram. Soc.91,3240(2008).