The effects of annealing temperature on the photoelectric properties of Al-doped ZnO (AZO) film grown with atomic layer deposition (ALD) technique are investigated. It is found that the full width at half maximum of X-ray diffraction peaks of the AZO thin film decreases from 0.609° before annealing to 0.454° after annealing at 600 ℃, and the crystal quality is improved. The surface roughness of thin film reduces from 0.841 nm before annealing to 0.738 nm after annealing at 600 ℃. The carrier concentration and mobility ratio of the thin film annealed at 400 ℃ are the largest, and they are 1.9×10 19 cm -3 and 4.2 cm 2·V -1·s -1, respectively. However, as the annealing temperature continues to increase, the carrier concentration and mobility ratio decrease. With the annealing temperature increases from 300 ℃ to 600 ℃, the absorption edge of the thin film shows blue-shift at first and then red-shift.