• Optoelectronics Letters
  • Vol. 15, Issue 2, 113 (2019)
Hong-liang LIN1、2, Xiang-hua ZENG1、*, Shi-man SHI2, Hai-jun TIAN2, Mo YANG2, Kai-ming CHU2, Kai YANG2, and Quan-su LI2
Author Affiliations
  • 1College of Physics Science and Technology & Institute of Optoelectronic Technology, Yangzhou University, Yang-zhou 225002, China
  • 2Yangzhou Change Light Optoelectronic Co., Ltd., Yangzhou 225009, China
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    DOI: 10.1007/s11801-019-8113-6 Cite this Article
    LIN Hong-liang, ZENG Xiang-hua, SHI Shi-man, TIAN Hai-jun, YANG Mo, CHU Kai-ming, YANG Kai, LI Quan-su. Optimization of GaAs-based 940 nm infrared light emit-ting diode with dual-junction design[J]. Optoelectronics Letters, 2019, 15(2): 113 Copy Citation Text show less
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    LIN Hong-liang, ZENG Xiang-hua, SHI Shi-man, TIAN Hai-jun, YANG Mo, CHU Kai-ming, YANG Kai, LI Quan-su. Optimization of GaAs-based 940 nm infrared light emit-ting diode with dual-junction design[J]. Optoelectronics Letters, 2019, 15(2): 113
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