The hot electron transfer resulting in fluorescence enhancement is significantly meaningful for theory and experiment of the study on photoelectric devices. However, the laser emission based on direct hot electron transfer is difficult to realize because of the low transfer efficiency. To achieve a laser with a new-generation mechanism based on hot electron transfer, the photoelectric co-excitation is proposed for improving the efficiency of hot electron transfer. The lasing behavior at 532 nm is realized with a threshold of $5\mathrm{kw}{\mathrm{cm}}^{-2}$ and 1 μA, which can be considered as the hot electron transfer resulting in population inversion enhancement. Meanwhile, the lasing output power is 0.3 mW. The hot electrons transfer process was described via the transient absorption spectrum according to the improved ground-state bleaching and excited-state absorption signal in device ON. Through comparison with the optical pump only, the quantum efficiencies of hot electron generation (HEG) and hot electron transfer (HET) were increased $\sim 31\%$ and 31%, respectively. Most importantly, a triple gain mode coupling device including local surface plasmon, hot electron transfer, and array oscillation was presented. Two modes of population inversion enhancement are proposed. This study can provide theoretical and experimental reference for the research of hot electron lasers and devices.