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    Journals >Chinese Optics Letters >Volume 14 >Issue 8 >Page 083501 > Article
    • Chinese Optics Letters
    • Vol. 14, Issue 8, 083501 (2016)
    Corrigendum-influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells
    Haiyan Lü1, Yuanjie Lü2, Qiang Wang1, Jianfei Li1, Zhihong Feng2, Xiangang Xu3, and Ziwu Ji1
    Author Affiliations
  • 1School of Physics, Shandong University, Jinan 250100, China
  • 2National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
  • 3Key Laboratory of Functional Crystal Materials and Device (Ministry of Education), Shandong University, Jinan 250100, China
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    DOI: 10.3788/col201614.083501 Cite this Article Set citation alerts
    Haiyan Lü, Yuanjie Lü, Qiang Wang, Jianfei Li, Zhihong Feng, Xiangang Xu, Ziwu Ji. Corrigendum-influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells[J]. Chinese Optics Letters, 2016, 14(8): 083501 Copy Citation Text show less

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    Haiyan Lü, Yuanjie Lü, Qiang Wang, Jianfei Li, Zhihong Feng, Xiangang Xu, Ziwu Ji. Corrigendum-influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells[J]. Chinese Optics Letters, 2016, 14(8): 083501
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