• Chinese Journal of Chemical Physics
  • Vol. 33, Issue 5, 05000554 (2020)
Liu Cai-he1、2, Bai Rui-peng1、2, Bai Yu1, Guo Yuan1、2, and Zhang Zhen1、2、*
Author Affiliations
  • 1Beijing National Laboratory of Molecular Sciences, State Key Laboratory of Molecular Reaction Dynamics, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
  • 2University of the Chinese Academy of Sciences, Beijing 100049, China
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    Air/Si(111) interface rotation diagram
    Fig. 1. Air/Si(111) interface rotation diagram
    (a) SHG response curve of air/Si(111) interface with the pp polarization combination. The circles in the figure represent experimental data points and the solid line represents the fitted curves. (b) Polar map of the air/Si(111) interface. The red circle represents the intensity of the SHG signal and the polar axis represents the angle
    Fig. 2. (a) SHG response curve of air/Si(111) interface with the pp polarization combination. The circles in the figure represent experimental data points and the solid line represents the fitted curves. (b) Polar map of the air/Si(111) interface. The red circle represents the intensity of the SHG signal and the polar axis represents the angle
    (a) Cyclic voltammogram (CV) curve measured from the Si(111)/CH\begin{document}$ _3 $\end{document}CN system with a scan rate of 50 mV/s. (b) The Mott-Schottky diagram from the Si(111)/CH\begin{document}$ _3 $\end{document}CN system measured at 1500 Hz. The red dots are the experimental data, and the red solid line is obtained by fitting using Eq.(5). The experiment temperature was 298 K
    Fig. 3. (a) Cyclic voltammogram (CV) curve measured from the Si(111)/CH\begin{document}$ _3 $\end{document}CN system with a scan rate of 50 mV/s. (b) The Mott-Schottky diagram from the Si(111)/CH\begin{document}$ _3 $\end{document}CN system measured at 1500 Hz. The red dots are the experimental data, and the red solid line is obtained by fitting using Eq.(5). The experiment temperature was 298 K
    The potential-dependent SHG intensity of the Si(111)/CH\begin{document}$ _3 $\end{document}CN system at azimuthal angles \begin{document}$ \phi $\end{document} = 0\begin{document}$ ^{\circ} $\end{document}, 30\begin{document}$ ^{\circ} $\end{document} and 60\begin{document}$ ^{\circ} $\end{document}. The red dots are the experimental data, and the black solid line is the fitting curve.
    Fig. 4. The potential-dependent SHG intensity of the Si(111)/CH\begin{document}$ _3 $\end{document}CN system at azimuthal angles \begin{document}$ \phi $\end{document} = 0\begin{document}$ ^{\circ} $\end{document}, 30\begin{document}$ ^{\circ} $\end{document} and 60\begin{document}$ ^{\circ} $\end{document}. The red dots are the experimental data, and the black solid line is the fitting curve.
    Table 1. Fitting results of potential dependent SHG response for different polarization combinations at $ \phi $=30$ ^{\circ} $
    Table 2. Fitting results of potential dependent SHG response for different polarization combinations at $\phi$=0$^{\circ}$. The relative phase $\theta$ cannot be obtained by Eq.(6), and the values are not shown in the table.
    Table 3. Fitting results of potential dependent SHG response for different polarization combinations at $ \phi $=60$ ^{\circ} $