Experimental study of GaN based blue light emitting diodes with a thin AlInN layer in front of the electron blocking layer

Gang LU; Bo WANG; Yun-wang GE

doi:10.1007/s11801-015-5065-3

[1] Akyol F., Nath D. N., Krishnamoorthy S., Park P. S. and Rajan S., Applied Physics Letters 100, 111118 (2012).

[2] Fu Y.-Y., Dai L.-P., Wang S.-Y. and Zhang G.-J., Optoelectronics Letters 9, 278 (2013).

[3] Shen Y. C., Müller G. O., Watanabe S., Gardner N. F., Munkholm A. and Krames M. R., Applied Physics Letters 91, 141101 (2007).

[4] Gardner N. F., Müller G. O., Shen Y. C., Chen G., Watanabe S., Gotz W. and Krames M. R., Applied Physics Letters 91, 243506 (2007).

[5] Kim M. H., Schubert M. F., Dai Q., Kim J. K., Schubert E. F., Piprek J. and Park Y., Applied Physics Letters 91, 183507 (2007).

[6] K. A. S. M. Ehteshamul Haque, Optoelectronics Letters 9, 177 (2013).

[7] Xie J., Ni X., Fan Q., Shimada R., Ozgur U. and Morkoc H., Applied Physics Letters 93, 121107 (2008).

[8] Wu L. J., Li S. T., Liu C., Wang H. L., Lu T. P., Zhang K., Xiao G. W., Zhou Y. G., Zheng S. W., Yin Y. A. and Yang X. D., Chinese Physics B 21, 068506 (2012).

[9] Monemar B. and Sernelius B. E., Applied Physics Letters 91, 181103 (2007).

[10] Wang C. H., Chen J. R., Chiu C. H., Kuo C. H., Li Y. L., Lu T. C. and Wang S. C., IEEE Photonics Technology Letters 22, 236 (2010).

[11] David A., Grundmann M. J., Kaeding J. F., Gardner N. F., Mihopoulos T. G. and Krames M. R., Applied Physics Letters 92, 053502 (2008).

[12] Han S. H., Lee D. Y., Lee S. J., Cho C. Y., Kwon M. K., Lee S. P., Noh D. Y., Kim D. J., Kim Y. C. and Park S. J., Applied Physics Letters 94, 231123 (2009).

[13] Wang C. H., Ke C. C., Lee C. Y., Chang S. P., Chang W. T. and Li J. C., Applied Physics Letters 97, 261103 (2010).

[14] Wang T. H. and Xu J. L., Chinese Physics B 22, 730 (2013).

[15] Choi S., Kim H. J., Kim S. S., Liu J., Kim J., Ryou J. H., Dupuis R. D., Fischer A. M. and Ponce F. A., Applied Physics Letters 96, 221105 (2010).

[16] Kuo Y. K., Tsai M. C. and Yen S. H., Optics Communications 282, 4252 (2009).

[17] Gong C. C., Fan G. H., Zhang Y. Y., Xu Y. Q., Liu X. P., Zheng S. W., Yao G. R. and Zhou D. T., Chinese Physics B 21, 583 (2012).

[18] Liu C., Li S. T., Lu T. P., Wu L. J., Yin Y. A., Xiao G. W., Zhou Y. G. and Wang H. L., IEEE Photonics Technology Letters 24, 14 (2012).

[19] Bernardini F., Nitride Semiconductor Devices: Principles and Simulation, Edited by J. Piprek, New York: Wiley, 4968 (2007).

[20] Vurgaftman I., Meyer J. R. and Ram-Mohan L. R., Journal of Applied Physics 89, 5815 (2001).

[21] http://crosslight.com/products/apsys/