A high dynamic range CMOS image sensor based on the time domain is proposed. The sensor was based on a novel structure that could detect high-input light intensity in the time domain and low-input light intensity in the analog domain. A time domain measurement circuit was added to the traditional CTIA structure, which could achieve a continuous and large dynamic range without changing the original integration process. Based on the 0.35μm and 5V-CMOS process, a 256×1 linear CMOS image sensor was implemented with a photodiode area of 22.5μm×22.5μm, and the photoelectric response of the device was fully characterized and simulated. The simulation results show that the time domain CMOS image sensor can reach the dynamic range of 96dB, and the two output signals of time domain and analog domain can be output synchronously with the power consumption of 7.98mW.