• Chinese Journal of Lasers
  • Vol. 40, Issue 11, 1102004 (2013)
Zheng Xiaogang*, Li Te, Lu Peng, Qu Yi, Bo Baoxue, Liu Guojun, Ma Xiaohui, and Li Zaijin
Author Affiliations
  • [in Chinese]
  • show less
    DOI: 10.3788/cjl201340.1102004 Cite this Article Set citation alerts
    Zheng Xiaogang, Li Te, Lu Peng, Qu Yi, Bo Baoxue, Liu Guojun, Ma Xiaohui, Li Zaijin. Analysis of Temperature Characteristics of 980 nm Semiconductor Laser Facet[J]. Chinese Journal of Lasers, 2013, 40(11): 1102004 Copy Citation Text show less

    Abstract

    Temperature characteristics of 980 nm semiconductor laser facet are analyzed. Catastrophic optical damage (COD) of semiconductor laser facet is the main reason which limits the lifetime and output power of laser. Through analyzing the heat source produced by facet, the model of facet temperature distribution is established and facet temperature field distribution is analyzed. Antireflection film and high reflection film with diamond passivation film are designed to simulate and contrast facet temperature characteristics of 980 nm semiconductor lasers with and without diamond passivation film. Simulation results show that the temperature of the former is lower than the latter of 9.0626 ℃. It can effectively reduce the facet temperature and improve the COD threshold of 980 nm semiconductor laser when coated with diamond passivation film.
    Zheng Xiaogang, Li Te, Lu Peng, Qu Yi, Bo Baoxue, Liu Guojun, Ma Xiaohui, Li Zaijin. Analysis of Temperature Characteristics of 980 nm Semiconductor Laser Facet[J]. Chinese Journal of Lasers, 2013, 40(11): 1102004
    Download Citation