Effects of interfacial buffering layer on imprint and domain switching dynamics in Pb(Zr,Ti)O3 thin-film heterostructures

Lingzhi Lu; Chunyan Zheng; Weijie Zheng; Chenyu Dong; Yuhao Yue; Yawen Xu; Zheng Wen

doi:10.1142/S2010135X23400106

Journals >Journal of Advanced Dielectrics >Volume 14 >Issue 3 >Page 2340010 > Article

Journal of Advanced Dielectrics
Vol. 14, Issue 3, 2340010 (2024)

Effects of interfacial buffering layer on imprint and domain switching dynamics in Pb(Zr,Ti)O₃ thin-film heterostructures

Lingzhi Lu¹, Chunyan Zheng¹, Weijie Zheng^1,2, Chenyu Dong^1,2..., Yuhao Yue^1,2, Yawen Xu^1,2 and Zheng Wen^1,2,*|Show fewer author(s)

Author Affiliations

¹College of Physics, Qingdao University, Qingdao, Shandong 266071, P. R. China

²College of Electronics and Information, Qingdao University, Qingdao, Shandong 266071, P. R. China

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DOI: 10.1142/S2010135X23400106 Cite this Article

Lingzhi Lu, Chunyan Zheng, Weijie Zheng, Chenyu Dong, Yuhao Yue, Yawen Xu, Zheng Wen. Effects of interfacial buffering layer on imprint and domain switching dynamics in Pb(Zr,Ti)O₃ thin-film heterostructures[J]. Journal of Advanced Dielectrics, 2024, 14(3): 2340010 Copy Citation Text

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