[2] LIU Xing-sheng. Packaging process of high power semiconductor lasers［M］. New York: Springer New York, 2015.
[3] TOMM J W, GERHARDT A, MULLER R,et al. Spatially resolved spectroscopic strain measurements on high-power laser diode bars［J］. Journal of Applied Physics, 2003, 93(3): 1354-1362.
[4] MARTIN-MARTIN A, AVELLA M, INIGUEZ M P, et al. Thermomechanical model for the plastic deformation in high power laser diodes during operation［J］. Journal of Applied Physics, 2009, 106(7): 073105.
[5] TIMOSHENKO S. Analysis of bimetal thermostats［J］. Journal of the Optical Society of America A, 1925, 11: 233-255.
[6] SUHIR E. Stresses in bimetal thermostats［J］. Journal of Applied Mechanics,1986, 53(3): 139-145.
[7] KUO A Y. Thermal stresses at the edge of a bimetallic thermostat［J］. Journal of Applied Mechanics,1989, 56(3): 585-589
[8] CHAPARALA S C, HUGHES L C, KWAK J, et al. Thermo-mechanical analysis of a laser diode chip in an opto-electronic package［C］. New York: AMER soc mechanical engineers, 2009: 655-663.
[9] YAN Yi, GUAN You-liang, CHEN Xu, et al. Effects of voids in sintered silver joint on thermal and optoelectronic performances of high power laser diode［J］. Journal of Electronic Packaging,2013, 135(4): 119-132.
[10] STASKE R, SEBASTIAN J, WENZEL H, et al. Influence of mounting stress on polarisation degree of electroluminescence of laser diode bars［C］.Netherlands:Lasers and Electro-Optics Europe, 2000: CWF99.
[11] HEMPEL M, ZIEGLER M, SCHWIRZKESCHAAF S, et al. Spectroscopic analysis of packaging concepts for high-power diode laser bars［J］.Applied Physics A Materials Science & Processing,2012, 107(2): 371-377.
[12] CASSIDY D T, REHIOUI O, HALL C K, et al. High-power diode laser bars and shear strain［J］. Optics Letters, 2013, 38(10): 1633-1635.
[13] WANG J, YUAN Z, KANG L, et al. Study of the mechanism of “smile” in high power diode laser arrays and strategies in improving near-field linearity［C］. Piscataway: Electronic Components & Technology Conference, 2009: 837-42.
[14] QIAO Yan-bin, CHEN Yan-ning, SHAO Jin, et al. Investigation of thermomechanical stress characteristics in high-power 808-nm AlGaAs/GaAs laser diode bars［C］. Piscataway: International Conference on Electronic Packaging Technology, 2016: 1132-1134.
[15] WANG Shu-na, ZHANG Pu, NIE Zhi-qiang, et al. Numerical modeling of the influence of temperature and driving current on “smile” in high power diode laser arrays［C］. Piscataway: International Conference on Electronic Packaging Technology, 2015: 95-101.
[16] LI Xiao-ning, WANG Jing-wei, FENG Fei-fei, et al. Effects of packaging on the performances of high brightness 9xx nm CW mini-bar diode lasers［C］. SPIE-the International Society for Optics and Photonics,2015, 9346: 93460C.
[17] PAO Y H, EISELE E. Interfacial shear and peel stresses in multilayered thin stacks subjected to uniform thermal loading［J］. Journal of Electronic Packaging,1991, 113(2): 164-172.
[18] SUHIR E. Interfacial stresses in bimetal thermostats［J］. Journal of Applied Mechanics, 1989, 56(3): 595-600.
[19] TSAI M Y, HSU C H, HAN C N, et al. A note on suhir′s solution of thermal stresses for a die-substrate assembly［J］.Journal of Electronic Packaging, 2004, 126(1): 115-119.
[20] HOSTETLER J L, JIANG C L, NEGOITA V, et al. Thermal and strain characteristics of high-power 940 nm laser arrays mounted with AuSn and In solders［C］. Bellingham: SPIE, P.O. Box 10, 2007: 6456
[21] AMUZUVI C K, BULL S, TOMM J W, et al. The impact of temperature and strain-induced band gap variations on current competition and emitter power in laser bars［J］.Applied Physics Letters,2011, 98(24): 241108.
