Research of strain state and dislocation density in the multiple AlGaN epitaxial layers with high Al content

[in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Optics Letters >Volume 3 >Issue 0s >Page 246 > Article

Chinese Optics Letters
Vol. 3, Issue 0s, 246 (2005)

Research of strain state and dislocation density in the multiple AlGaN epitaxial layers with high Al content

[in Chinese], [in Chinese], and [in Chinese]

Author Affiliations

Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083

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[in Chinese], [in Chinese], [in Chinese]. Research of strain state and dislocation density in the multiple AlGaN epitaxial layers with high Al content[J]. Chinese Optics Letters, 2005, 3(0s): 246 Copy Citation Text

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References

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[5] T. Metzger, R. hopler, and E. born, Philos. Mag. A 77, 1013 (1998).

[6] J. Domagala, M. Leszczynski, and P. Prystawko, Alloy and Compounds 286, 284 (1999).

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[8] E. Zielinska-Rohozinska, M. Kowalska, and K. Pakula, Cryst. Res. Technol. 38, 951 (2003).

[9] S. Einfeldt, V. Kirchner, H. Heinke, M. Diebelberg, S. Figge, K. Vogeler, and D. Hommel, J. Appl. Phys. 88, 7029 (2000).

[in Chinese], [in Chinese], [in Chinese]. Research of strain state and dislocation density in the multiple AlGaN epitaxial layers with high Al content[J]. Chinese Optics Letters, 2005, 3(0s): 246

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