Optical Response Analysis of Tapered Coupled Ridge Waveguide Transistor Detector

Hong-yun XIE; Min GUO; Jia-jun MA; Jie GAO; Liang CHEN; Pei MA; Xian-cheng LIU; Wan-rong ZHANG

doi:10.3788/gzxb20194812.1248002

[1] H A KHAN, A A REZAZADEH, S SOHAIB. Detailed analysis on the spectral response of InP/InGaAs HPTs for optoelectronic applications. IEEE Journal of Quantum Electronics, 48, 576-580(2012).

[2] Shang-jian ZHANG, Heng WANG, Xin-hai ZOU. Self-calibrating measurement of high-speed electro-optic phase modulators based on two-tone modulation. Optics Letters, 39, 3504(2014).

[3] M OGURA, S W CHOI, S FURUE. Effects of zn doped mesa sidewall on gain enhanced InGaAs/InP heterobipolar phototransistor. IEEE Journal of Quantum Electronics, 46, 214-219(2010).

[4] KAMITSUNAH, IDA M, KURISHIMA K. A 60GHzb optical injectionlocked oscillat using a topbackilluminated InPInGaAs HPT[C]. IEEE International Conference on Indium Phosphide & Related Materials, IEEE, 2007: 381247https:www.researchgate.publication4258611_A_60GHzb_optical_injectionlocked_oscillat_using_a_topbackilluminated_InPInGaAs_HPT

[5] Zhang WANG, N W EMANETOGLU, N BAMBHA. Design and analysis of In0.53Ga0.47As/InP symmetric gain optoelectronic mixers. Solid State Electronics, 54, 1549-1553(2010).

[6] E ROUVALIS, M CHTIOUI, F VAN DIJK. 170 GHz uni-traveling carrier photodiodes for InP-based photonic integrated circuits. Optics Express, 20, 20090(2012).

[7] KLAMKIN J, MADISON S M, OAKLEY D C, et al. Highpower highspeed waveguide unitravelingcarrier photodiodes f microwave photonics applications[C]. Microwave Symposium Digest, IEEE, 2011: 5972782.https:www.researchgate.publication252026541_Highpower__highspeed_waveguide_unitravelingcarrier_photodiodes_f_microwave_photonics_applications

[8] Zhi-yun JIANG, Hong-yun XIE, Liang-hao ZHANG. Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor. Chinese Physics B, 24, 048504(2015).

[9] T SHI, B XIONG, C SUN. Back-to-back UTC-PDs with high responsivity, high saturation current and wide bandwidth. IEEE Photonics Technology Letters, 25, 136-139(2013).

[10] C LI, C L XUE, C B LI. High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector. Chinese Physics B, 22, 118503(2013).

[11] Qing-tao CHEN, Yong-qing HUANG, Jia-rui FEI. Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity. Chinese Physics B, 24, 108506(2015).

[12] W S KO, I BHATTACHARYA, T T D TRAN. Ultrahigh responsivity-bandwidth product in a compact InP nanopillar phototransistor directly grown on silicon. Scientific Reports, 6, 33368(2016).

[13] M S PARK, J H JANG. Enhancement of optical gain in floating-base InGaP-GaAs heterojunction phototransistors. IEEE Photonics Technology Letters, 22, 1202-1204(2010).

[14] K NAKAYAMA, Y SHOJI, T MIZUMOTO. Single trench SiON waveguide TE-TM mode converter. IEEE Photonics Technology Letters, 24, 1310-1312(2012).

[15] S P POGOSSIAN, L VESCAN, A VONSOVICI. The single-mode condition for semiconductor rib waveguides with large cross section. Lightwave Technology Journal of, 16, 1851-1853(1998).