Mingxuan Gao, Yang Zhang, Jun Zhang. Influence of high-power microwave signal on temperature distribution of PIN limiter[J]. High Power Laser and Particle Beams, 2024, 36(4): 043022
- High Power Laser and Particle Beams
- Vol. 36, Issue 4, 043022 (2024)
Fig. 1. Field-circuit collaborative simulation model of two-stage PIN limiter
Fig. 2. Structure and doping concentration of the first stage PIN diode
Fig. 3. Structure and doping concentration of the second stage PIN diode
Fig. 4. Curve of the two PIN diodes’ temperature distribution inside the limiter at the moment its maximum temperature reaches the melting point of silicon
Fig. 5. Temperature distribution under different amplitude (local)
Fig. 6. Temperature distribution under different frequency (local)
Fig. 7. Normalized dissipation power distribution under the action of signals with different amplitude at the moment the limiter’s maximum temperature reaches the melting point of silicon (local)
Fig. 8. Electron and hole concentration distribution at different moments in a signal cycle
Fig. 9. Electric field distribution at different moment in the signal cycle
Fig. 10. Current density distribution at different moment in the signal cycle
Fig. 11. Normalized electric field distribution under the action of signals with different amplitude at the moment the limiter’s maximum temperature reaches the melting point of silicon (local)
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Table 1. Width of high-temperature area under different amplitude
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