[1] VLASKINA S I. 3C-6H transformation in heated cubic silicon carbide 3C-SiC［J］. Semiconductor Physics Quantum Electronics and Optoelectronics, 2011, 14(4): 432-436.

[2] VLASKINA S I, BUSINKAA@MAIL RU E M. Silicon carbide phase transition in as-grown 3C-6H polytypes junction［J］. Semiconductor Physics Quantum Electronics and Optoelectronics, 2013, 16(2): 132-135.

[3] PARISH C M, KOYANAGI T, KONDO S, et al. Irradiation-induced β to α SiC transformation at low temperature［J］. Scientific Reports, 2017, 7: 1198.

[4] ZHU B, ZHAO D, ZHAO H W. A study of deformation behavior and phase transformation in 4H-SiC during nanoindentation process via molecular dynamics simulation［J］. Ceramics International, 2019, 45(4): 5150-5157.

[5] YANG J W, PIROUZ P. The α → β polytypic transformation in high-temperature indented SiC［J］. Journal of Materials Research, 1993, 8(11): 2902-2907.

[6] SHI H J, CHAI Y D, LI N, et al. Interfacial reaction mechanism of SiC joints joined by pure nickel foil［J］. Journal of the European Ceramic Society, 2020, 40(15): 5162-5171.

[7] GUZMN DE VILLORIA R, MIRAVETE A. Mechanical model to evaluate the effect of the dispersion in nanocomposites［J］. Acta Materialia, 2007, 55(9): 3025-3031.

[8] SENGUPTA P, SAHOO S S, BHATTACHARJEE A, et al. Effect of TiC addition on structure and properties of spark plasma sintered ZrB2-SiC-TiC ultrahigh temperature ceramic composite［J］. Journal of Alloys and Compounds, 2021, 850: 156668.

[9] ZHAO Y H, HOU H, ZHAO Y H, et al. First-principles study of the nickel-silicon binary compounds under pressure［J］. Journal of Alloys and Compounds, 2015, 640: 233-239.

[10] GEENEN F A, KNAEPEN W, MOENS F, et al. Anisotropic thermal expansion of Ni, Pd and Pt germanides and silicides［J］. Journal of Physics D: Applied Physics, 2016, 49(27): 275307.

[11] KIEWEL H, BUNGE H J, FRITSCHE L. Effect of orientation correlation on the elastic constants of polycrystalline materials［J］. Textures and Microstructures, 1996, 28(1/2): 105-120.

[12] KELLY B T, WALKER P L. Theory of thermal expansion of a graphite crystal in the semi-continuum model［J］. Carbon, 1970, 8(2): 211-226.

[13] JEPPS N W, PAGE T F. Polytypic transformations in silicon carbide［J］. Progress in Crystal Growth and Characterization, 1983, 7(1/2/3/4): 259-307.

[14] WHITNEY E D, SHAFFER P T B. Investigation of the phase transformation between alpha- and beta-silicon carbide at high pressures［J］. High Temperatures-High Pressures, 1969,1(1):107-110.

[15] SOKHOR M I, KONDAKOV V G, FELDGUN L I. Transition of silicon carbide from the hexagonal to the cubic phase under the influence of high pressures and high temperatures ［J］. Soviet Physics Doklady, 1967, 175(4): 826.

[16] MEDVEDEVA N I, YURYEVA  I, IVANOVSKII A L. Titanium, vanadium, and nickel impurities in 3C-SiC: electronic structure and lattice relaxation effects［J］. Semiconductors, 2002, 36(7): 751-754.

[17] YURYEVA E I, IVANOVSKII A L. Electronic structure and chemical bonding of nickel impurities in cubic silicon carbide［J］. Russian Journal of Coordination Chemistry, 2002, 28(12): 881-888.