[1] Sukumar B,Navaneethkrishnan K.Effect of the dielectric function and pressure on the binding energies of excitons in GaAs and GaAs/Ga1-xAlxAs superlattices.Solid State Commun,1990,76(4):561~564
[2] Sukumar B,Navaneethkrishnan K.Diamagnetic susceptibility of a donor in a GaAs/Ga1-xAlxAs quantum well heterostructure and its pressure dependence.Phys Stat Sol(b),1990,158:193~199
[3] Shan W,Fang X M,Li D,et al.Photomodulated transmission spectroscopy of the intersubband transitions in strained In1-xGaxAs/GaAs multiple quantum wells under hydrostatic pressure.Phys Rev(B),1991,43(18):14615~14620
[6] Cingolani R,Prete P,Greco D,et al.Exciton spectroscopy in Zn1-xCdxSe/ZnSe quantum wells.Phys Rev(B),1995,51(8):5176~5183
[8] Tuchman J A,Kim S,Sui Zhifeng,et al.Exciton photoluminescence in strained and unstrained ZnSe under hydrostatic pressure.Phys Rev(B),1992,46(20):13371~13378
[9] Benjamin R,Chandrasekhar M,et al.Pressure tuning of strains in semiconductor heterostructures:(ZnSe epilayer)/(GAAs epilayer).Phys Rev(B),1991,44(20):11307~11314
[10] Ohkawa K,Mitsuyu T,Yamazaki O.Effect of biaxial strain on exciton luminescence of heteroepitaxial ZnSe layers.Phys Rev(B),1988,38(17):12465~12469
[11] Ban S L,Hasbun J E.Interface polarons in a realistic heterojunction potential.Eur Phys J(B),1999,8(3):453~461
[12] Hiromiteu A,Kunishge Oe.Energy band-gap shifts with elasticstrain in GaxIn1-xP epitaxial layers on (001) GaAs substrates.J Appl Phys,54(4):1983:2052~2056
[13] Gell M A,Ninno D,Jaros M,et al.Effects of alloying and hydrostatic pressure on electronic and optical properties of GaAs-AlxGal-xAs superlattices and multiple-quantum-well structures.Phys Rev(B),1987,35(3):1196~1222