Researching | A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure

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Chip
Vol. 3, Issue 1, 100079 (2024)

A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure

Ru Xu^1,2, Peng Chen^1,*, Xiancheng Liu¹, Jianguo Zhao²..., Tinggang Zhu³, Dunjun Chen¹, Zili Xie¹, Jiandong Ye¹, Xiangqian Xiu¹, Fayu Wan², Jianhua Chang², Rong Zhang^1,** and Youdou Zheng^1,***|Show fewer author(s)

Author Affiliations

¹The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China

²School of Electronic and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China

³Corenergy Semiconductor Incorporation, Suzhou 215600, China

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DOI: 10.1016/j.chip.2023.100079 Cite this Article

Ru Xu, Peng Chen, Xiancheng Liu, Jianguo Zhao, Tinggang Zhu, Dunjun Chen, Zili Xie, Jiandong Ye, Xiangqian Xiu, Fayu Wan, Jianhua Chang, Rong Zhang, Youdou Zheng. A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure[J]. Chip, 2024, 3(1): 100079 Copy Citation Text

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References

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[7] J. Lei, et al.. 650-V double-channel lateral Schottky barrier diode with dual-recess gated anode.

[8] T. Zhang, et al.. A > 3 kV/2.94 mΩ· cm2 and low leakage current with low turn-on voltage lateral GaN Schottky barrier diode on silicon substrate with anode engineering technique.

[9] M. Zhu, et al.. 1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon.

[10] Y.-W. Lian, Y.-S. Lin, J.-M. Yang, C.-H. Cheng, S.S.H. Hsu. AlGaN/GaN Schottky barrier diodes on silicon substrates with selective Si diffusion for low onset voltage and high reverse blocking.

[11] J. Ma, G. Kampitsis, P. Xiang, K. Cheng, E. Matioli. Multi-Channel tri-gate GaN power Schottky diodes with low ON-resistance.

[12] E. Matioli, B. Lu, T. Palacios. Ultralow leakage current AlGaN/GaN Schottky diodes with 3-D anode structure.

[13] A.P. Zhang, et al.. Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage.

[14] A. Colón, et al.. Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode.

[15] C.-W. Tsou, K.-P. Wei, Y.-W. Lian, S.S.H. Hsu. 2.07-kV AlGaN/GaN Schottky barrier diodes on silicon with high Baliga’s figure-of-merit.

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[19] Q. Zhou, et al.. High reverse blocking and low onset voltage AlGaN/GaN-on-Si lateral power diode with MIS-gated hybrid anode.

[20] E. Bahat-Treidel, et al.. Fast-switching GaN-based lateral power Schottky barrier diodes with low onset voltage and strong reverse blocking.

[21] M. Basler, et al.. Large-area lateral AlGaN/GaN-on-Si field-effect rectifier with low turn-on voltage.

[22] M. Xiao, Y. Ma, K. Liu, K. Cheng, Y. Zhang. 10 kV, 39 mΩ·cm2 multi-channel AlGaN/GaN Schottky barrier diodes.

[23] M. Xiao, et al..

[24] M. Xiao, et al.. 3.3 kV multi-channel AlGaN/GaN Schottky barrier diodes with P-GaN termination.

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[27] S.-W. Han, et al.. Experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diode capable of 2.8 kV switching.

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[29] R. Xu, et al.. 3.4-kV AlGaN/GaN Schottky barrier diode on silicon substrate with engineered anode structure.

[30] R. Xu, et al.. High power Figure-of-Merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel and sub-100-μm anode-to-cathode spacing.

[31] S.M. Sze, M.K. Lee.

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Ru Xu, Peng Chen, Xiancheng Liu, Jianguo Zhao, Tinggang Zhu, Dunjun Chen, Zili Xie, Jiandong Ye, Xiangqian Xiu, Fayu Wan, Jianhua Chang, Rong Zhang, Youdou Zheng. A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure[J]. Chip, 2024, 3(1): 100079

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