• Chinese Journal of Lasers
  • Vol. 34, Issue 5, 633 (2007)
[in Chinese]1、2、*, [in Chinese]1, [in Chinese]1、2, and [in Chinese]1、2
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  • 1[in Chinese]
  • 2[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Low Power Laser Diode-Pumped Solid-State Yb:YAG Laser at Room Temperature[J]. Chinese Journal of Lasers, 2007, 34(5): 633 Copy Citation Text show less

    Abstract

    A low power laser diode (LD) end-pumped Yb:YAG laser has been demonstrated. At room temperature, the Yb:YAG laser has a quasi-three-level structure; and the lasing threshold is high because of serious re-absorption at the laser wavelength. In order to improve pump intensity, double LD polarization coupling system was employed in the experiment. The stable operation at 1030 nm was realized in a linear cavity by reducing doping concentration and efficient cooling with thermal electric cooler (TEC). The crystal is 0.7 mm in thickness and 11mm in diameter. The doping concentration (atomic percent) is 8%. The end face of crystal is coated for high reflection at 940 nm, which leads to a second pass of the pump light. The maximum output power of 192.8 mW at 1030 nm is obtained when the incident power is 2 W. The optical-optical conversion efficiency is 9.6%. The power instability is better than ±3.5% in 2 hours.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Low Power Laser Diode-Pumped Solid-State Yb:YAG Laser at Room Temperature[J]. Chinese Journal of Lasers, 2007, 34(5): 633
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