• Acta Photonica Sinica
  • Vol. 41, Issue 10, 1242 (2012)
ZHAO Yin-nü*
Author Affiliations
  • [in Chinese]
  • show less
    DOI: 10.3788/gzxb20124110.1242 Cite this Article
    ZHAO Yin-nü. Preparation and Properties of Zn-doped β-Ga2O3 Films[J]. Acta Photonica Sinica, 2012, 41(10): 1242 Copy Citation Text show less
    References

    [1] ORITA M, HIRAMATSU H, OHTA H, et al. Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures[J]. Thin Solid Films, 2002, 411(1): 134-139.

    [2] LIU Jian-jun, YAN Jin-liang, SHI Liang, et al. Electrical and optical properties of deep ultraviolet transparent conductive Ga2O3/ITO films by magnetron sputtering[J]. Chinese Journal of Semiconductors, 2010, 31(10):103001-5.

    [3] KIM K S, KIM H W, LEE C M. Effect of growth temperature on ZnO thin film deposited on SiO2 substrate[J]. Materials Science and EngineeringB, 2003, 98(2): 135-139.

    [4] YAN Jin-liang, ZHANG Yi-jun, LI Qing-shan, et al. Optical properties of N-doped β-Ga2O3 films deposited by RF magnetron sputtering[J]. Acta Photonica Sinica, 2011, 40(6): 852-856.

    [5] YAN Jin-liang, ZHAO Yin-nü. Optical properties of Cu-doped β-Ga2O3 thin films[J]. Acta Photonica Sinica, 2012, 41(6): 704-707.

    [6] YAN Jin-liang, ZHAO Yin-nü. Electronic structure and optical properties of N-Zn co-doped β-Ga2O3 [J]. Science in China Series G: Physics, Mechanics and Astronomy, 2012, 55(4): 1-6.

    [7] ZHANG J G, XIA C G, DENG Q. Growth and characterization of new transparent conductive oxides single crystals β-Ga2O3∶Sn[J]. Journal of Physics and Chemistry Solids, 2006, 67(8): 1656–1659.

    [8] KIYOSHI S, ENEAMNACION G, VILLORA, et al. Excitation and photoluminescence of pure and Si-doped β-Ga2O3 single crystals[J]. Applied Physics Letters, 2008, 92(20): 201914-3.

    [9] SUZUKI N, OHIRA S, TANAKA M, et al. Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal[J]. Physical Status Solidi, 2007, 4(7): 2310-2313.

    [10] ZHANG Li-ying, YAN Jin-liang, ZHANG Yi-jun, et al. A comparison of electronic structure and optical properties between N-doped β-Ga2O3 and N-Zn co-doped β-Ga2O3[J]. Physica B, 2012, 407(8): 1227-1231.

    [11] HAO J, COCIVERA M. Optical and luminescent properties of undoped and rare earth doped Ga2O3 thin films deposited by spray pyrolysis[J]. Journal of Physics D, 2002, 35(5): 433-439.

    [12] Al-KUHAILI M F, DURRANI S M A, KHAWAJA E E. Optical properties of gallium oxide films deposited by electron-beam evaporation[J]. Applied Physics Letters, 2003, 83(22): 4533-4537.

    [13] SHIMAMURA, VILLORA K, UJIIE E G, et al. Excitation and photoluminescence of pure and Si-doped β-Ga2O3 single crystals[J]. Applied Physics Letters, 2008, 92(20): 201914-201918.

    ZHAO Yin-nü. Preparation and Properties of Zn-doped β-Ga2O3 Films[J]. Acta Photonica Sinica, 2012, 41(10): 1242
    Download Citation