• Semiconductor Optoelectronics
  • Vol. 44, Issue 4, 580 (2023)
SU Zhi1、2, HE Wenyan2, WEI Ming2, and WANG Changjun2、*
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.16818/j.issn1001-5868.2023041901 Cite this Article
    SU Zhi, HE Wenyan, WEI Ming, WANG Changjun. Preparation of Multi-Band High Reflectivity Ag-Based Films Based on Nanolaminate Protection Layers[J]. Semiconductor Optoelectronics, 2023, 44(4): 580 Copy Citation Text show less

    Abstract

    The Ag-based films have highest reflectivity from VIS to IR. However, the environmental stability of Ag thin films is poor and susceptible to corrosion with reflectivity reduction. Different thickness ratio of Ta2O5-SiO2 nanolaminate films were prepared by ion beam assisted electron beam evaporation (IAD). The effective refractive index and residual stress of the films were calculated. Furthermore, the nanoaminate film with Ta2O5 thickness percentage of 75% was selected, and the nano-amine structured protective layer Ag-based film system and the conventional two-layer structured protective layer Ag-based film system were further designed and prepared. Multi-band high reflectivity targets were achieved and the residual stress of the two Ag-based films were similar. After 24 hours of humidity test, the reflectance redshift of nanolaminate protection Ag-based films is less than conventional two-layers type protection Ag-based films. After 144 hours of humidity test, the degree of corrosion of the surface defects of nanolaminate protection Ag-based films is less than that of the conventional two-layers type protection Ag-based films. Combined with TEM observation results after combining FIB sample preparation, it is shown that the nanolaminate protection layers possess higher density and can provide better environmental stability for Ag-based films systems.
    SU Zhi, HE Wenyan, WEI Ming, WANG Changjun. Preparation of Multi-Band High Reflectivity Ag-Based Films Based on Nanolaminate Protection Layers[J]. Semiconductor Optoelectronics, 2023, 44(4): 580
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