Applications of Thin-film Topological Insulators in Ultrafast Optical Devices （Invited）

Kun LIAO; Chentong LI; Xiaoyong HU; Qihuang GONG

doi:10.3788/gzxb20215008.0850210

Journals >Acta Photonica Sinica >Volume 50 >Issue 8 >Page 0850210 > Article

Acta Photonica Sinica
Vol. 50, Issue 8, 0850210 (2021)

Applications of Thin-film Topological Insulators in Ultrafast Optical Devices （Invited）

Kun LIAO, Chentong LI, Xiaoyong HU, and Qihuang GONG

Author Affiliations

State Key Laboratory for Mesoscopic Physics， Department of Physics， Peking University， Beijing100871， China

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DOI: 10.3788/gzxb20215008.0850210 Cite this Article

Kun LIAO, Chentong LI, Xiaoyong HU, Qihuang GONG. Applications of Thin-film Topological Insulators in Ultrafast Optical Devices （Invited）[J]. Acta Photonica Sinica, 2021, 50(8): 0850210 Copy Citation Text

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Fig. 1. Crystal structure and energy band of TIs^{［10，49］}

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Fig. 2. Structure images of TIs under several fabrication methods^{［24，44，57，70，73-74，77-78］}

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Fig. 3. Z-scan experiments and saturable absorption properties of TIs^［79-80］

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Fig. 4. High harmonic generation in THz of TIs^［87］

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Fig. 5. Optical-electric properties and hyperbolic characteristic of TIs^{［50， 92-94］}

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Fig. 6. Principle and experiments of Q-switching pulse laser based on TI^{［24，116］}

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Fig. 7. Principle and experiments of mode-lock pulse laser based on TI saturable absorber^［121］

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Fig. 8. Phase-change memory and optical switch/router based on TIs^{［42，54］}

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Fig. 9. Optical modulators based on TIs^{［46，47］}

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Fig. 10. Photodetectors based on TIs^［33］

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Material	Method	Gain medium	Central wavelength/nm	Repetitive frequency/kHz	Pulse length /ns	Pulse energy/nJ	Ref.	Year
Bi₂Se₃	SAM	Nd：GdVo₄	1063	547	666	58.5	［116］	2013
Bi₂Se₃	SAM	Nd：YVO₄	1066.6	135	0.25	0.56	［109］	2015
Bi₂Se₃	SAM	Nd：LiYF₄	1313	161.3	0.433	1.23	［5］	2015
Bi₂Se₃	SAM	Tm：LuAG	2027	118	0.62	18.4	［103］	2017
Bi₂Te₃/Graphene	SAM	Tm：YAP	1980	108	238	21.7 $μ J$	［19］	2017
Bi₂Te₃	SAM	Yb：LuPO₄	1014.5	1670	34	3	［97］	2018
Bi₂Te₃	SAM	Tm：LuAG	2021.7	145.5	233	/	［98］	2018

Table 1. Recently reported Q-Switching solid-state lasers based on TI thin film （chronological order）

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Material	Method	Gain medium	Central wavelength /nm	Repetitive frequency/MHz	Pulse length/ps	Pulse energy/nJ	Output power/mW	Ref.	Year
Bi₂Se₃	SAM	EDF	1 557~1 565	1.21	1.57	/	/	［118］	2012
Bi₂Te₃	Microfiber	EDF	1 558.5	2.04 GHz	2.49	/	5.02	［29］	2013
Bi₂Se₃	Sandwiched	YDF	1 031.7	44.6	47	0.756	/	［115］	2014
Bi₂Se₃	Sandwiched	EDF	1 557.5	12.5	0.66	/	1.8	［121］	2014
Bi₂Se₃	Sandwiched	EDF	1 561.6/1 562.1	3.54	13.6 ns	2.824	/	［111］	2015
Bi₂Te₃	Sandwiched	EDF	1 548~1 570	10.71	4.5	2.8	/	［107］	2015
Bi₂Te₃	Microfiber	EDF	1 564.1	2.95 GHz	0.92	/	45.3	［106］	2015
Sb₂Te₃	D-shaped fiber	EDF	1 568.8	33.07	0.195	/	9	［113］	2015
Sb₂Te₃	D-shaped fiber	YDF	1 036.7	19.28	5.3	/	4	［105］	2016
Sb₂Te₃	D-shaped fiber	YDF	1 065.3	19.28	5.9	0.81	/	［105］	2016
Bi₂Se₃	Sandwiched	YDF	1 040	16	380	1.06	17.1	［100］	2018
Bi₂Se₃	Microfiber	EDF	1 560.88	3.125 GHz	1.754	4.5 pJ	6.4	［102］	2018
Bi₂Te₃	D-shaped fiber	TDF	1 935	27.9	0.795	0.72	/	［99］	2018

Table 2. Part of recently reported mode-locking fiber lasers based on TI thin film （chronological order）

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Material	Method	Gain medium	Central wavelength /nm	Repetitive frequency/kHz	Pulse length/ $μ$ s	Pulseenergy/nJ	Ref.	Year
Bi₂Se₃	Sandwiched	YDF	1 060	8.3~29.1	1.95	17.9	［30］	2013
Bi₂Te₃	Sandwiched	EDF	1 510~1 589	2.15~12.8	13~49	1 525	［117］	2013
Bi₂Se₃	Sandwiched	EDF	1 530	6.2~40.1	4.9	39.8	［68］	2014
Bi₂Se₃	Sandwiched	EDF	1 565	459~940	1.9~7.76	23.8	［25］	2014
Bi₂Se₃	SAM	Ho-ZBLAN	2 979.9	46~81.96	1.37~4.83	3.99	［122］	2015
Bi₂Te₃	Sandwiched	EDF	1 550	31.54~49.4	3.7~5.2	125	［104］	2016
Bi₂Se₃	Sandwiched	EDF	1 550.5	63.2~68.9	1.49~2.54	0.797	［101］	2018

Table 3. Recently reported Q-Switching fiber lasers based on TI thin film （chronological order）

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Material	Response/ （A · W^-1）	EQE/%	Wavelength/nm	$τ_{o n}$ / $τ_{o f f}$ /ms	Ref.	Year
Bi₂Te₃ （TF）/Si	1	/	370~118 000	100/100	［124］	2015
Bi₂Te₃ （C）/Graphene	35	8 400	532~1 550	/	［39］	2015
Bi₂Se₃ （TF）/Si	24.28	/	808	2.5/5.5 $μ s$	［123］	2016
Bi₂Te₃（TF）/Si	0.033 2	7.4	1 064~1 550	/	［125］	2017
Bi₂Te₃（C）/SnSe/Bi₂Te₃（C）	5.5	1 833	370~808	40/60	［126］	2017
Bi₂Te₃ （TF）/Pentacene	14.89	2 840	450~3 500	1.89/2.47	［127］	2019
Bi₂Te₃ （TF）/CuPc	23.54	4 503	405~3 500	1.42/1.98	［33］	2019
Bi₂Te₃ （TF）/WSe₂	20.5	/	375-1 550	0.18/0.21	［128］	2019

Table 4. Recently reported photodetectors based on TI thin film （chronological order）

Kun LIAO, Chentong LI, Xiaoyong HU, Qihuang GONG. Applications of Thin-film Topological Insulators in Ultrafast Optical Devices （Invited）[J]. Acta Photonica Sinica, 2021, 50(8): 0850210

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