• Journal of Terahertz Science and Electronic Information Technology
  • Vol. 22, Issue 12, 1414 (2024)
YAN Lei1,2, SHI Feng1,2, CHENG Hongchang1,2, MIAO Zhuang1,2..., YANG Ye2, FAN Haibo2, HAN Jian2 and JIAO Gangcheng1,2|Show fewer author(s)
Author Affiliations
  • 1Science and Technology on Low-Light-Level Night Vision Laboratory, Xi'an Shaanxi 710065, China
  • 2Kunming Institute of Physics, Kunming Yunnan 650223, China
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    DOI: 10.11805/tkyda2023131 Cite this Article
    YAN Lei, SHI Feng, CHENG Hongchang, MIAO Zhuang, YANG Ye, FAN Haibo, HAN Jian, JIAO Gangcheng. Gain attenuation of CMOS image sensor caused by electron bombardment[J]. Journal of Terahertz Science and Electronic Information Technology , 2024, 22(12): 1414 Copy Citation Text show less
    References

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    [4] ROBBINS M S, HADWEN B J. The noise performance of electron multiplying charge-coupled devices[J]. IEEE Transactions on electron Device, 2003, 50(5): 1227-1232. doi: 10.1109/TED.2003.813462.

    [5] HIRVONEN L M, SUHLING K. Photon counting imaging with an electron-bombarded pixel image sensor[J]. Sensors, 2016, 16(5): 617. doi: 10.3390/s16050617.

    [6] NIKZAD S, YU Q M, AIME′E L S, et al. Direct detection and imaging of low-energy electrons with delta-doped charge-coupled devices[J]. Applied Physics Letters, 1998, 73(23): 3417-3419. doi: 10.1063/1.122783.

    [9] HOWARD N E. Development of techniques to characterize electron-bombarded charge-coupled devices[D]. Arizona: The University of Arizona, 2002.

    [12] SROUR R J, PALKO J W. Displacement damage effects in irradiated semiconductor devices[J]. Transactions on Nuclear Science, 2013, 60(3): 1740-1766. doi: 10.1109/TNS.2013.2261316.

    [14] TERMAN L M. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes[J]. Solid State Electronics, 1962(5): 285-299. doi: 10.1016/0038-1101(62)90111-9.

    YAN Lei, SHI Feng, CHENG Hongchang, MIAO Zhuang, YANG Ye, FAN Haibo, HAN Jian, JIAO Gangcheng. Gain attenuation of CMOS image sensor caused by electron bombardment[J]. Journal of Terahertz Science and Electronic Information Technology , 2024, 22(12): 1414
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