Simulation of Strain Distribution of GaAs Nanoparticles with Growth in Different Environment

JIANG Zi-xiong; ZHANG Qiu-long; YUAN Cai-lei

doi:10.3788/gzxb20134202.0186

[1] WELLNER A, PAILLARD V, BONAFOS C,et al. Stress measurements of germanium nanocrystals embedded in silicon oxide［J］.Journal of Applied Physics, 2003, 94(9): 5639-5642.

[2] CHEW H G, ZHENG F, CHOI W K, et al. Influence of reductant and germanium concentration on the growth and stress development of germanium nanocrystals in silicon oxide matrix［J］.Nanotechnology, 2007, 18(6): 065302.

[3] YUAN C L, LEE P S, YE S L. Formation,photoluminescence and chargestorage characteristics of Au nanocrystals embedded in amorphous Al2O3 matrix［J］. Europhysics Letters, 2007, 80(4): 67003.

[4] YUAN C L, LIU Q, XU B. Strain-induced structural phase transition of Si nanoparticles［J］. Journal of Physiccal Chemistry C, 2011, 115(33): 16374-16377.

[5] YUAN C L, YE S L, XU B, et al. Strain induced tetragonal SrTiO3 nanoparticles at room temperature［J］.Applied Physics Letters, 2012, 10(7): 071909.

[6] YUAN C L, CAI H, LEE P S. Tuning photoluminescence of Ge/GeO2 core/shell nanoparticles by strain［J］. Journal of Physical Chemistry C, 2009, 113(46): 19863-19866.

[7] YUANC L, LEI W. Photoluminescence and charge storage characteristics of silica nanocrystals: the role of stress-induced interface defects［J］. Applied Surface Science, 2010, 256(10): 3138-3141.

[8] USAMI N, AZUMA Y, UJIHARAT, et al. SiGe bulk crystal as a lattice-matched substrateto GaAs for solar cell applications［J］. Applied Physics Letters, 2000, 77(22): 3565-3567.

[9] WANG Xin-mei, SHI Wei, Qu Guang-hui, et al. Analysis of carrier impact ionization in nonlinear photoconductive semiconductor switch［J］. Acta Photonica Sinica, 2008, 37(10): 1958-1961.

[10] ZHANG Tong-yi, SHI Shun-xiang, ZHAO Wei, et al. The effect of negative differential mobility and impact ionization on nonlinearity of GaAs photoconductive semiconductor swith［J］. Acta Photonica Sinica, 2002, 31(4): 445-449.

[11] DIAZ J G, BRYANT G W. Electronic and optical fine structure of GaAs nanocrystals: The role of d orbitals in a tight-binding approach［J］. Physical Review B, 2006, 73(7): 075329P1-P9.

[12] NAYAK J, SAHU SN, NOZALI S. GaAs nanocrystals: structure and vibrational properties［J］. Applied Surface Science, 2006, 252(8): 2867-2874.

[13] MAVI H S, SHUKLA A K, CHAUHAN B S,et al. Surface morphology and formation of GaAs nanocrystals by laser-induced etching: SEM, PL and Raman studies［J］.Materials Science and Engineering B-solid State Materials for Advanced Technology, 2004, 107(2): 148-154.

[14] ZHANG Qiu-long, JANG Zi-xiong, YUAN Cai-lei, et al. Strain distribution of Ni nanoparticles embedded in Al2O3 ultrathin film［J］. Scientia Sinica Physica, Mechanica & Astronomica, 2012, 42(7): 711-715.

[15] PEI Q X, LU C, WANG Y Y. Effect of elastic anisotropy on the elastic fields and vertical alignment of quantum dots［J］. Journal of Applied Physics, 2003, 93(3): 1487-1492.

[16] SHIN H, LEE W, YOO Y H. Comparison of strain fields in truncated and un-truncated quantum dots in stacked InAs/GaAs nanostructures with varying stacking periods［J］.Journal of Physics-Condensed Matter, 2003, 15(22): 3689-3699.