Ming CHENG, Dongxu ZHAO, Yunpeng WANG, Fei WANG, Yi FAN, Yang JIANG. Process development of small size copper-plated InP wafer with 8-inch CMP equipment[J]. Optics and Precision Engineering, 2024, 32(3): 392
- Optics and Precision Engineering
- Vol. 32, Issue 3, 392 (2024)
Fig. 1. Main components of CMP
Fig. 2. Schematic diagram of CMP working principle
Fig. 3. Fixture design and working diagram for CMP of 2 inch InP wafer
Fig. 4. CMP actual effect of initial 2-inch InP wafer
Fig. 5. Improved InP wafer fixture and CMP working diagram
Fig. 6. Comparison of CMP removal rate between edge and center of InP wafer
Fig. 7. Prominent of Cu pillar on surface of InP wafer
Fig. 8. Bonding of InP wafer with 8-inch Si wafer
Fig. 9. Cu pillar below surface of InP wafer
Fig. 10. Morphology of Cu pillars at center and edge of InP wafer
Fig. 11. AFM image of 2 inch InP wafer surface
Fig. 12. Surface topography of 2-inch InP wafer after CMP
Fig. 13. Bonding results of 2-inch InP wafer with 8-inch Si wafer
Fig. 14. Morphology of single Cu pillar after annealing of InP wafer
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Table 1. Process parameters for CMP copper with pressure as variable
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Table 2. Process parameters for CMP copper at variable speeds
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