Intracavity third-harmonic generation in a continuous-wave/self-mode-locked semiconductor disk laser

Chunling Li; Jia Cheng; Renjiang Zhu; Tao Wang; Lidan Jiang; Cunzhu Tong; Yanrong Song; Peng Zhang

doi:10.3788/COL202321.051404

[1] M. Kuznetsov, F. Hakimi, R. Sprague, A. Mooradian. High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams. IEEE Photon. Tech. Lett., 9, 1063(1997).

[2] B. Heinen, T. L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, W. Stolz. 106 W continuous-wave output power from vertical-external-cavity surface-emitting laser. Electron. Lett., 48, 516(2012).

[3] M. Guina, A. Rantamäki, A. Härkönen. Optically pumped VECSELs: review of technology and progress. J. Phys. D, 50, 383001(2017).

[4] R. C. Sterling, H. Rattanasonti, S. Weidt, K. Lake, P. Srinivasan, S. C. Webster, M. Kraft, W. K. Hensinger. Fabrication and operation of a two-dimensional ion-trap lattice on a high-voltage microchip. Nat. Commun., 5, 3637(2014).

[5] S. C. Burd, J. P. Penttinen, P. Y. Hou, H. M. Knaack, S. Ranta, M. Mäki, E. Kantola, M. Guina, D. H. Slichter, D. Leibfried, A. C. Wilson. VECSEL systems for quantum information processing with trapped beryllium ions(2020).

[6] B. Rauh, S. Kreling, M. Kolb, M. Geistbeck, S. Boujenfa, M. Suess, K. Dilger. UV-laser cleaning and surface characterization of an aerospace carbon fibre reinforced polymer. Int. J. Adhes. Adhes., 82, 50(2018).

[7] J. Paul, Y. Kaneda, T. L. Wang, C. Lytle, J. V. Moloney, R. J. Jones. Doppler-free spectroscopy of mercury at 253.7 nm using a high-power, frequency-quadrupled, optically pumped external-cavity semiconductor laser. Opt. Lett., 36, 61(2011).

[8] M. Polanik, J. Hirlinger-Alexander. Generation of ultraviolet laser light by frequency tripling of a high-power infrared optically pumped semiconductor disk laser(2016).

[9] J. M. Rodríguez-García, D. Pabœuf, J. E. Hastie. Tunable, CW laser emission at 225 nm via intracavity frequency tripling in a semiconductor disk laser. IEEE J. Sel. Top. Quantum Electron., 23, 5100608(2017).

[10] E. J. Saarinen, R. Herda, O. G. Okhotnikov. Dynamics of pulse formation in mode-locked semiconductor disk lasers. J. Opt. Soc. Am. B, 24, 2784(2007).

[11] G. J. Spühler, K. J. Weingarten, R. Grange, L. Krainer, M. Haiml, V. Liverini, M. Golling, S. Schön, U. Keller. Semiconductor saturable absorber mirror structures with low saturation fluence. Appl. Phys. B, 81, 27(2005).

[12] A. A. Lagatsky, C. G. Leburn, C. T. A. Brown, W. Sibbett, S. A. Zolotovskaya, E. U. Rafailov. Ultrashort-pulse lasers passively mode locked by quantum-dot-based saturable absorbers. Prog. Quant. Electron., 34, 1(2010).

[13] Y. F. Chen, Y. C. Lee, H. C. Liang, K. Y. Lin, K. W. Su, K. F. Huang. Femtosecond high-power spontaneous mode-locked operation in vertical-external cavity surface-emitting laser with gigahertz oscillation. Opt. Lett., 36, 4581(2011).

[14] L. Kornaszewski, G. Maker, G. P. A. Malcolm, M. Butkus, E. U. Rafailov, C. J. Hamilton. SESAM-free mode-locked semiconductor disk laser. Laser Photonics Rev., 6, L20(2012).

[15] R. Bek, M. Großmann, H. Kahle, M. Koch, A. Rahimi-Iman, M. Jetter, P. Michler. Self-mode-locked AlGaInP-VECSEL. Appl. Phys. Lett., 111, 182105(2017).

微信扫一扫：分享

微信扫一扫：分享