To enlarge the grain size and decrease the effect of the defect between the grain boundaries on a p-Si film transistor, a phase modulated excimer laser crystallization technique is used to fabricate the uniform p-Si film with a large grain size. First, an energy window for super lateral growth is determined by measuring the grain size of p-Si film fabricated with different laser energy intensities. Then, the spatial distribution of the input laser is modulated by a phase mask with a period of 1 073 nm and an artificially controlled lateral temperature gradient is induced on the a-Si film, which leads the a-Si to be melten and crystallized into p-Si grains by super lateral growth. Finally, the characteristics of the prepared p-Si film are measured and compared with those of the a-Si film and the p-Si film fabricated by super lateral growth technique. The results show that the grain size of the p-Si film is 228.24 nm, which is ten times of that fabricated by super lateral growth under the same processing parameters; the electrical resistivity of the prepared sample is 18.9 Ω·m, which is lower by an order magnitude than that prepared by super lateral growth. Furthermore, the distribution of the grain is more uniform than that fabricated by other techniques. The reported technique can increase the electrical characteristics of the p-Si film greatly and is suitable for the fabrication of high quality p-Si devices.