• Chinese Journal of Lasers
  • Vol. 36, Issue s2, 11 (2009)
Li Hui*, Liu Guojun, Qu Yi, Wang Yuxia, Li Mei, Lu Peng, and Qiao Zhongliang
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  • [in Chinese]
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    DOI: 10.3788/cjl200936s2.0011 Cite this Article Set citation alerts
    Li Hui, Liu Guojun, Qu Yi, Wang Yuxia, Li Mei, Lu Peng, Qiao Zhongliang. High Performance High Beam Quality 808 nm Tapered Semiconductor Lasers[J]. Chinese Journal of Lasers, 2009, 36(s2): 11 Copy Citation Text show less

    Abstract

    The free space laser communication has advantages of large data transmission amount,high direction of transmission and high transmission security. It has become one of the developing directions of next generation optical communication technologies. The tapered semiconductor lasers are the most important optical sources in the free space laser communication. In this paper,it has introduced the structure design,output characteristics and beam quality of 808 nm tapered semiconductor lasers. The total laser cavity length is 3.5 mm (tapered single emitters consist of a ridge section with a length of 800 μm and a tapered section with a length of 2.7 mm,the tapered angle is 6°). Si and SiO2 (95% reflectivity) are deposited at the rear facet with the help of electronic beam evaporator. The front facet is coated with a single layer of SiON (<1% reflectivity).The threshold current of the device is 0.75 A. The maximum slope efficiency is 0.615 W/A. The output power of the device reaches 2 W,horizontal divergence is 3.9°,vertical divergence is 40° and M2 factor is less than 1.8. It shows the device has good beam quality.
    Li Hui, Liu Guojun, Qu Yi, Wang Yuxia, Li Mei, Lu Peng, Qiao Zhongliang. High Performance High Beam Quality 808 nm Tapered Semiconductor Lasers[J]. Chinese Journal of Lasers, 2009, 36(s2): 11
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