• Chinese Journal of Lasers
  • Vol. 45, Issue 12, 1211002 (2018)
Junshan Xiu1、*, Shiming Liu1, Kunkun Wang1, Shenggui Fu1, Tao Wang2, and Yunyan Liu1、*
Author Affiliations
  • 1 School of Physics and Optoelectronic Engineering, Shandong University of Technology,Zibo, Shandong 255049, China
  • 2 Shandong Zibo Hanergy Thin Film Solar Cell Co. Ltd., Zibo, Shandong 255000, China
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    DOI: 10.3788/CJL201845.1211002 Cite this Article Set citation alerts
    Junshan Xiu, Shiming Liu, Kunkun Wang, Shenggui Fu, Tao Wang, Yunyan Liu. Analytical Investigation of Cu(In, Ga)Se2 Thin Films Using Laser Induced reakdown Spectroscopy Technology[J]. Chinese Journal of Lasers, 2018, 45(12): 1211002 Copy Citation Text show less
    Diagram of LIBS experimental set-up for detecting CIGS thin film
    Fig. 1. Diagram of LIBS experimental set-up for detecting CIGS thin film
    XRD spectrum of CIGS thin film
    Fig. 2. XRD spectrum of CIGS thin film
    LIBS spectra of CIGS thin film. (a) Spectral lines of Cu, In and Ga; (b) spectral lines of Cu I 327.39 nm at various working pressures
    Fig. 3. LIBS spectra of CIGS thin film. (a) Spectral lines of Cu, In and Ga; (b) spectral lines of Cu I 327.39 nm at various working pressures
    Curves of LIBS intensity ratio and (a) xCu/x(In+Ga) or (b) xGa/x(In+Ga)
    Fig. 4. Curves of LIBS intensity ratio and (a) xCu/x(In+Ga) or (b) xGa/x(In+Ga)
    LIBS intensity ratio of analytical spectral line of CIGS thin film deposited at various pressures
    Fig. 5. LIBS intensity ratio of analytical spectral line of CIGS thin film deposited at various pressures
    Transmittance of CIGS thin films deposited at various pressures
    Fig. 6. Transmittance of CIGS thin films deposited at various pressures
    Pressure /PaxCu /%xIn /%xGa /%xSe /%xGa/x(In+Ga)xCu/x(In+Ga)
    0.521.66018.41256.957552.8550.27300.855
    1.021.90015.90007.360054.8000.32000.935
    2.020.03513.16256.995059.8050.34650.990
    2.521.03014.90006.080057.9900.29001.000
    Table 1. EDS analysis results of CIGS thin film deposited at various working pressures
    ElementNumber of linesWavelength /nm
    Cu13324.75,327.39,329.05,330.79,465.11,510.55,515.32,521.82,529.25,570.02,578.21,793.31,809.26
    In6275.38,283.69,303.93,325.61,410.17,451.13
    Ga3287.42,403.29,417.20
    Table 2. LIBS spectral lines of target elements in CIGS thin film
    Junshan Xiu, Shiming Liu, Kunkun Wang, Shenggui Fu, Tao Wang, Yunyan Liu. Analytical Investigation of Cu(In, Ga)Se2 Thin Films Using Laser Induced reakdown Spectroscopy Technology[J]. Chinese Journal of Lasers, 2018, 45(12): 1211002
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