• Acta Physica Sinica
  • Vol. 68, Issue 19, 198501-1 (2019)
Lei-Jie Zhu and Fa-Qiang Wang*
DOI: 10.7498/aps.68.20190793 Cite this Article
Lei-Jie Zhu, Fa-Qiang Wang. Design and analysis of new meminductor model based on Knowm memristor[J]. Acta Physica Sinica, 2019, 68(19): 198501-1 Copy Citation Text show less
Symbol of Knowm memristor.Knowm忆阻器符号
Fig. 1. Symbol of Knowm memristor.Knowm忆阻器符号
Theoretical model of Knowm memristor.Knowm忆阻器的理论模型
Fig. 2. Theoretical model of Knowm memristor.Knowm忆阻器的理论模型
Emulator circuit for meminductor.忆感器模拟电路图
Fig. 3. Emulator circuit for meminductor.忆感器模拟电路图
relationship diagram under different parameters: (a) = 100—140 Hz,= 1.62 mA/V; 11. (b) = 240—400 Hz, = 1.62 mA/V; (c) = 500—1400 Hz,= 1.62 mA/V; (d) = 120 Hz,=1.49—1.97 mA/V.不同参数情况下的关系图 (a) = 100—140 Hz,= 1.62 mA/V; (b) = 240—400 Hz, = 1.62 mA/V; (c) = 500—1400 Hz,= 1.62 mA/V; (d) = 120 Hz,= 1.49—1.97 mA/V
Fig. 4. relationship diagram under different parameters: (a) = 100—140 Hz, = 1.62 mA/V; 11. (b) = 240—400 Hz, = 1.62 mA/V; (c) = 500—1400 Hz, = 1.62 mA/V; (d) = 120 Hz, =1.49—1.97 mA/V. 不同参数情况下的 关系图 (a) = 100—140 Hz, = 1.62 mA/V; (b) = 240—400 Hz, = 1.62 mA/V; (c) = 500—1400 Hz, = 1.62 mA/V; (d) = 120 Hz, = 1.49—1.97 mA/V
relationship diagram under different Knowm memristor parameters: (a) ,; (b) ,.不同Knowm忆阻器参数情况下的关系图 (a) , ; (b) ,
Fig. 5. relationship diagram under different Knowm memristor parameters: (a) , ; (b) , . 不同Knowm忆阻器参数情况下的 关系图 (a) , ; (b) ,
Wiring diagram for the experiment.实验接线图
Fig. 6. Wiring diagram for the experiment.实验接线图
relationship diagram under different parameters. The first channel is , and the second channel is: (a) = 100 Hz,= 1.62 mA/V; (b) = 120 Hz,= 1.62 mA/V; (c) = 140 Hz,= 1.62 mA/V; (d) = 120 Hz,= 1.49 mA/V.不同参数作用下的关系图, 其中第一通道为, 第二通道为(a) = 100 Hz,= 1.62 mA/V; (b) = 120 Hz,= 1.62 mA/V; (c) = 140 Hz, = 1.62 mA/V; (d) = 120 Hz,= 1.49 mA/V
Fig. 7. relationship diagram under different parameters. The first channel is , and the second channel is : (a) = 100 Hz, = 1.62 mA/V; (b) = 120 Hz, = 1.62 mA/V; (c) = 140 Hz, = 1.62 mA/V; (d) = 120 Hz, = 1.49 mA/V. 不同参数作用下的 关系图, 其中第一通道为 , 第二通道为  (a) = 100 Hz, = 1.62 mA/V; (b) = 120 Hz, = 1.62 mA/V; (c) = 140 Hz, = 1.62 mA/V; (d) = 120 Hz, = 1.49 mA/V
元件参数值
${V_{{\rm{dd}}}}$/V $ \pm {\rm{10 }}$
${V_{\rm{m}}}$/mV 60
${R_{\rm{1}}}$/kΩ 56
${R_2}$/kΩ 56
${R_6}$/kΩ 51
${R_7}$/kΩ 200
$C$$100\;{\rm{ nF}}-{R_3} = {R_4} = 43\;{\rm{k}}\Omega,{R_5} = 22\;{\rm{k}}\Omega $
${\rm{47\;nF}}-{R_3} = {R_4}={\rm{80\;k}}\Omega,{R_5}={\rm{40\;k}}\Omega $
$10\;{\rm{ nF}}-{R_3} = {R_4} = 100\;{\rm{ k}}\Omega,{R_5} = 50\;{\rm{ k}}\Omega $
Table 1. Component parameter values used in LTspice simulation circuits.
Lei-Jie Zhu, Fa-Qiang Wang. Design and analysis of new meminductor model based on Knowm memristor[J]. Acta Physica Sinica, 2019, 68(19): 198501-1
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