• Chinese Journal of Lasers
  • Vol. 35, Issue 8, 1181 (2008)
Meng Hongyun1、2、* and Lee ChangHee2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    Meng Hongyun, Lee ChangHee. Amplified Spontaneous Emission Injection Wavelength-Locked Fabry-Perot Laser Diodes[J]. Chinese Journal of Lasers, 2008, 35(8): 1181 Copy Citation Text show less

    Abstract

    The wavelength-division-multiplexing passive optical network (WDM-PON) has been considered as a promising solution for future broadband access networks. The WDM-PON based on the amplified spontaneous emission (ASE) injected wavelength-locked Fabry-Perot (F-P) laser diodes has gained great attention because of its cost-effectiveness and color-free operation. The gain, side-mode suppression ratio (SMSR) and relative intensity noise (RIN) of the wavelength-locked F-P laser diode (LD) have been studied experimentally. And the relationship between injection current and the reflectivity of front facet of F-P LD, for a given ASE and gain, has been studied theoretically and experimentally. The best RIN and SMSR can be got with the injection current which is 1.3~1.7 times of threshold current. And there is an optimum front facet for a given ASE injection power and gain with the smallest injection current.
    Meng Hongyun, Lee ChangHee. Amplified Spontaneous Emission Injection Wavelength-Locked Fabry-Perot Laser Diodes[J]. Chinese Journal of Lasers, 2008, 35(8): 1181
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