Researching | Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the “green gap”

Journals >Photonics Research >Volume 8 >Issue 5 >Page 750 > Article

Photonics Research
Vol. 8, Issue 5, 750 (2020)

Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the “green gap”

Chunyu Zhao^1、2, Chak Wah Tang¹, Billy Lai¹, Guanghui Cheng², Jiannong Wang², and Kei May Lau^1、*

Author Affiliations

¹Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China

²Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China

show less

DOI: 10.1364/PRJ.380158 Cite this Article Set citation alerts

Chunyu Zhao, Chak Wah Tang, Billy Lai, Guanghui Cheng, Jiannong Wang, Kei May Lau. Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the “green gap”[J]. Photonics Research, 2020, 8(5): 750 Copy Citation Text

show less

References

[1] S. Pimputkar, J. S. Speck, S. P. DenBaars, S. Nakamura. Prospects for LED lighting. Nat. Photonics, 3, 180-182(2009).

[2] G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, E. Zanoni. Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies. J. Appl. Phys., 114, 071101(2013).

[3] J. Cho, E. F. Schubert, J. K. Kim. Efficiency droop in light-emitting diodes: challenges and countermeasures. Laser Photonics Rev., 7, 408-421(2013).

[4] R. Langer, J. Simon, V. Ortiz, N. T. Pelekanos, A. Barski, R. Andre, M. Godlewski. Giant electric fields in unstrained GaN single quantum wells. Appl. Phys. Lett., 74, 3827-3829(1999).

[5] J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, C. Weisbuch. Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop. Phys. Rev. Lett., 110, 177406(2013).

[6] M.-H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, Y. Park. Origin of efficiency droop in GaN-based light-emitting diodes. Appl. Phys. Lett., 91, 183507(2007).

[7] F. Bernardini, V. Fiorentini, D. Vanderbilt. Spontaneous polarization and piezoelectric constants of III-V nitrides. Phys. Rev. B, 56, 10024-10027(1997).

[8] F. Bernardini, V. Fiorentini. Spontaneous versus piezoelectric polarization in III-V nitrides: conceptual aspects and practical consequences. Phys. Status Solidi B, 216, 391-398(1999).

[9] S. Nakamura. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes. Science, 281, 956-961(1998).

[10] A. David, M. J. Grundmann. Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes. Appl. Phys. Lett., 97, 033501(2010).

[11] W. Lv, L. Wang, L. Wang, Y. Xing, D. Yang, Z. Hao, Y. Luo. InGaN quantum dot green light-emitting diodes with negligible blue shift of electroluminescence peak wavelength. Appl. Phys. Express, 7, 025203(2014).

[12] S. Schulz, E. P. O’Reilly. Theory of reduced built-in polarization field in nitride-based quantum dots. Phys. Rev. B, 82, 033411(2010).

[13] C. Adelmann, J. Simon, G. Feuillet, N. T. Pelekanos, B. Daudin, G. Fishman. Self-assembled InGaN quantum dots grown by molecular-beam epitaxy. Appl. Phys. Lett., 76, 1570-1572(2000).

[14] J. Zhang, M. Hao, P. Li, S. J. Chua. InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant. Appl. Phys. Lett., 80, 485-487(2002).

[15] K. Tachibana, T. Someya, Y. Arakawa. Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition. Appl. Phys. Lett., 74, 383-385(1999).

[16] M. Zhang, P. Bhattacharya, W. Guo. InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop. Appl. Phys. Lett., 97, 011103(2010).

[17] Y. Zhang, M. D. Sturge, K. Kash, B. P. van der Gaag, A. S. Gozdz, L. T. Florez, J. P. Harbison. Temperature dependence of luminescence efficiency, exciton transfer, and exciton localization in GaAs/Al_xGa_1-xAs quantum wires and quantum dots. Phys. Rev. B, 51, 13303-13314(1995).

[18] D. J. Eaglesham, M. Cerullo. Dislocation-free Stranski-Krastanow growth of Ge on Si(100). Phys. Rev. Lett., 64, 1943-1946(1990).

[19] J. Ma, X. L. Ji, G. H. Wang, X. C. Wei, H. X. Lu, X. Y. Yi, R. F. Duan, J. X. Wang, Y. P. Zeng, J. M. Li, F. H. Yang, C. Wang, G. Zou. Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots. Appl. Phys. Lett., 101, 131101(2012).

[20] Y. K. Ee, H. P. Zhao, R. A. Arif, M. Jamil, N. Tansu. Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy. J. Cryst. Growth, 310, 2320-2325(2008).

[21] G. E. Weng, W. R. Zhao, S. Q. Chen, H. Akiyama, Z. C. Li, J. P. Liu, B. P. Zhang. Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green. Nanoscale Res. Lett., 10, 31(2015).

[22] P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, K. H. Ploog. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes. Nature, 406, 865-868(2000).

[23] T. Lin, H. C. Kuo, X. D. Jiang, Z. C. Feng. Recombination pathways in green InGaN/GaN multiple quantum wells. Nanoscale Res. Lett., 12, 137(2017).

[24] T. T. Zhu, F. Oehler, B. P. L. Reid, R. M. Emery, R. A. Taylor, M. J. Kappers, R. A. Oliver. Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy. Appl. Phys. Lett., 102, 251905(2013).

[25] Y. Xing, D. Zhao, D. Jiang, Z. Liu, J. Zhu, P. Chen, J. Yang, F. Liang, S. Liu, L. Zhang. Carrier redistribution between two kinds of localized states in the InGaN/GaN quantum wells studied by photoluminescence. Nanoscale. Res. Lett., 14, 88(2019).

[26] T. Lu, Z. Ma, C. Du, Y. Fang, H. Wu, Y. Jiang, L. Wang, L. Dai, H. Jia, W. Liu, H. Chen. Temperature-dependent photoluminescence in light-emitting diodes. Sci. Rep., 4, 6131(2014).

[27] Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, S. Nakamura. Green semipolar (20) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth. Appl. Phys. Express, 6, 062102(2013).

[28] Z. Liu, T. Wei, E. Guo, X. Yi, L. Wang, J. Wang, G. Wang, Y. Shi, I. Ferguson, J. Li. Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate. Appl. Phys. Lett., 99, 091104(2011).

[29] K. Tachibana, T. Someya, R. Werner, A. Forchel, Y. Arakawa. MOCVD growth of a stacked InGaN quantum dot structure and its lasing oscillation at room temperature. Phys. E, 7, 944-948(2000).

Figures&Tables (6)

References (29)

Copy Citation Text

Chunyu Zhao, Chak Wah Tang, Billy Lai, Guanghui Cheng, Jiannong Wang, Kei May Lau. Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the “green gap”[J]. Photonics Research, 2020, 8(5): 750

Download Citation

Set citation alerts for the article

Set citation alerts for the article

Save the article for my favorites

Paper Information

Recommended Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology

Set citation alerts for the article

Please enter your email address