• Optoelectronics Letters
  • Vol. 13, Issue 4, 282 (2017)
Chao TIAN1、2, Shu-xu GUO1, Jing-qiu LIANG3, Zhong-zhu LIANG3, and Feng-li GAO1、*
Author Affiliations
  • 1State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
  • 2Semiconductor Manufacturing North China (Beijing) Corporation, Beijing 100176, China
  • 3Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
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    DOI: 10.1007/s11801-017-7048-z Cite this Article
    TIAN Chao, GUO Shu-xu, LIANG Jing-qiu, LIANG Zhong-zhu, GAO Feng-li. Thermal analysis and an improved heat-dissipation structure design for an AlGaInP-LED micro-array device[J]. Optoelectronics Letters, 2017, 13(4): 282 Copy Citation Text show less

    Abstract

    This paper describes a novel finite element thermal analysis model for an AlGaInP-LED micro-array device. We also conduct a transient analysis for the internal temperature field distribution of a 5×5 array device when a 3×3 unit is driven by pulse current. In addition, for broader applications, a simplified thermal analysis model is introduced and its accuracy is verified. The internal temperature field distribution of 100×100 units is calculated using the simplified model. The temperature at the device center reaches 360.6 °C after 1.5 s. In order to solve the heat dissipation problem of the device, an optimized heat dissipation structure is designed, and the effects of the number and size of the heat dissipation fins on the thermal characteristics of the device are analyzed.
    TIAN Chao, GUO Shu-xu, LIANG Jing-qiu, LIANG Zhong-zhu, GAO Feng-li. Thermal analysis and an improved heat-dissipation structure design for an AlGaInP-LED micro-array device[J]. Optoelectronics Letters, 2017, 13(4): 282
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