An InAlGaAs/AlGaAs strained quantum-well laser with high temperature stability was designed and grown to overcome the emission wavelength shift occurred in high temperature for a 852 nm laser diode. Based on a comprehensive model, the gains and wavelengths versus the operation temperatures of InAlGaAs, InGaAsP, InGaAs and GaAs quantum-wells were calculated and compared. The results indicate that In0.15Al0.11Ga0.74As quantum-well is the most appropriate candidate for the quantum well of the 852 nm laser diode with the higher gain and better temperature stability simultaneously. Then, Metal-organic Chemical Vapor Deposition(MOCVD) was used to grow compressive-strained In0.15Al0.11Ga0.74As/Al0.3Ga0.7As active region and Reflectance Anisotropy Spectroscopy (RAS) and Photoluminescence Measurements (PL) were applied to the evaluation of crystalline quality for InAlGaAs/AlGaAs interfaces. It is proved that the indium segregation effect can be effectively suppressed by lowering the growth temperature and using the interruption time between InAlGaAs quantum-well and AlGaAs barriers, and an abrupt interface and good crystalline quality for InAlGaAs/AlGaAs quantum-well can be obtained. Finally, an InAlGaAs/AlGaAs strained quantum-well laser was grown with optimized growth conditions. Experimental results indicate that the laser has a Full Width Half Maximum (FWHM) of 1.1 nm, the slope efficiency of 64 W/A and the wavelength shift with temperature of 0.256 nm/K. The theoretical calculation results are in good agreement with experimental results, which verifies that the laser meets the work requirements at a high temperature.