Lead zirconium titanate (PZT) films were deposited on Pt/Ti bottom electrode by magnetron sputtering process. The influences of in-situ annealing temperature and electrode deposition temperature on crystal orientation, microstructure, dielectric, ferroelectric, and fatigue characteristics of sputtered PZT films were studied. The results of X-ray diffraction (XRD) and scanning electron microscope (SEM) analysis show that as the electrode deposition temperature increases, the Pt crystal grain size increases, and as the annealing temperature increases, the PZT film compactness becomes worse. The Pt/Ti bottom electrode prepared at room temperature after in-situ annealed in 200 ℃ for 30 min can easily promote the (100) orientation of the PZT film, while the Pt/Ti bottom electrode prepared or annealed at high temperature is more conducive to the (111) orientation. The best dielectric property is obtained in the PZT film according to electrical tests, in which the Pt/Ti bottom electrode is prepared at room temperature and in-situ annealed in 200 ℃ for 30 min. And the PZT film exhibits high residual polarization strength and minimum coercive field strength. After 108 times polarization inversions, the initial polarization of the film drop is only 11%.