High-strain InGaAs/GaAs quantum well grown by MOCVD

Gu Lei; Li Lin; Qiao Zhongliang; Kong Lingyi; Yuan Huibo; Liu Yang; Dai Yin; Bo Baoxue; Liu Guojun

doi:10.3788/col201412.102702

Journals >Chinese Optics Letters >Volume 12 >Issue 10 >Page 102702 > Article

Chinese Optics Letters
Vol. 12, Issue 10, 102702 (2014)

High-strain InGaAs/GaAs quantum well grown by MOCVD

Gu Lei¹, Li Lin¹, Qiao Zhongliang¹, Kong Lingyi²..., Yuan Huibo¹, Liu Yang¹, Dai Yin¹, Bo Baoxue¹ and Liu Guojun¹|Show fewer author(s)

Author Affiliations

¹National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, Jilin 130022, China

²AIXTRON China Limited, Shanghai 200052, China

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DOI: 10.3788/col201412.102702 Cite this Article Set citation alerts

Gu Lei, Li Lin, Qiao Zhongliang, Kong Lingyi, Yuan Huibo, Liu Yang, Dai Yin, Bo Baoxue, Liu Guojun, "High-strain InGaAs/GaAs quantum well grown by MOCVD," Chin. Opt. Lett. 12, 102702 (2014) Copy Citation Text

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Gu Lei, Li Lin, Qiao Zhongliang, Kong Lingyi, Yuan Huibo, Liu Yang, Dai Yin, Bo Baoxue, Liu Guojun, "High-strain InGaAs/GaAs quantum well grown by MOCVD," Chin. Opt. Lett. 12, 102702 (2014)

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