Researching | Experimental Study of Hot Curing of Si-wafers by Laser

Journals >Chinese Journal of Lasers >Volume 21 >Issue 8 >Page 688 > Article

Chinese Journal of Lasers
Vol. 21, Issue 8, 688 (1994)

Experimental Study of Hot Curing of Si-wafers by Laser

[in Chinese], [in Chinese], [in Chinese], and [in Chinese]

Author Affiliations

[in Chinese]

show less

DOI: Cite this Article Set citation alerts

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Experimental Study of Hot Curing of Si-wafers by Laser[J]. Chinese Journal of Lasers, 1994, 21(8): 688 Copy Citation Text

show less

Abstract

In this paper laser gettering technique is introduced.Its principle is analysed and some experimental results are presented. This technique is now on trial in a transistor'S production line.

Keywords

P-N juction semiconductor device''s bsse thermal property laser gettering

Get PDF(in Chinese)

Figures&Tables (0)

Copy Citation Text

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Experimental Study of Hot Curing of Si-wafers by Laser[J]. Chinese Journal of Lasers, 1994, 21(8): 688

Download Citation

Set citation alerts for the article

Set citation alerts for the article

Save the article for my favorites

Paper Information

Recommended Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology

Set citation alerts for the article

Please enter your email address