• Acta Photonica Sinica
  • Vol. 51, Issue 2, 0251209 (2022)
Lei HU1, Deyao LI1, Jianping LIU1、*, Aiqin TIAN1, Dan WANG1, Tao ZHANG1, Si WU1, Peng XU2, and Hui YANG1
Author Affiliations
  • 1Key Lab of Nanodevices and Applications,Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou,Jiangsu 215123,China
  • 2Guangdong Institute of Semiconductor Micro-nano Manufacturing Technology,Foshan,Guangdong 528000,China
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    DOI: 10.3788/gzxb20225102.0251209 Cite this Article
    Lei HU, Deyao LI, Jianping LIU, Aiqin TIAN, Dan WANG, Tao ZHANG, Si WU, Peng XU, Hui YANG. High-power GaN-based Blue Laser Diodes with 7.5 W of Light Output Power Under Continuous-wave Operation(Invited)[J]. Acta Photonica Sinica, 2022, 51(2): 0251209 Copy Citation Text show less
    References

    [1] S NAKAMURA. The roles of structural imperfections in ingan-based blue light-emitting diodes and laser diodes. Science, 281, 956-961(1998).

    [2] F A PONCE, D P BOUR. Nitride-based semiconductors for blue and green light-emitting devices. Nature, 386, 351-359(1997).

    [3] S NAKAMURA, T MUKAI, M SENOH. Candela-class high-brightness ingan/algan double-heterostructure blue-light-emitting diodes. Applied Physics Letters, 64, 1687-1689(1994).

    [4] A POURHASHEMI, R M FARRELL, D A COHEN et al. High-power blue laser diodes with indium tin oxide cladding on semipolar (20¯2¯1) GaN substrates. Applied Physcals Letter, 106, 111105(2015).

    [5] J PIPREK. Comparative efficiency analysis of GaN-based light-emitting diodes and laser diodes. Applied Physics Letters, 109, 021104(2016).

    [6] J J WIERER, J Y TSAO, D S SIZOV. Comparison between blue lasers and light-emitting diodes for future solid-state lighting. Laser & Photonics Reviews, 7, 963-993(2013).

    [7] D QUEREN, M SCHILLGALIES, A AVRAMESCU et al. Quality and thermal stability of thin ingan films. Journal of Crystal Growth, 311, 2933-2936(2009).

    [8] S I NAGAHAMA, T YANAMOTO, M SANO et al. Wavelength dependence of InGaN laser diode characteristics. Japanese Journal of Applied Physics, 40, 3075-3081(2001).

    [9] Zengcheng LI, Jianping LIU, Meixin FENG et al. Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth. Applied Physics Letters, 103, 152109(2013).

    [10] Xiaohao GUO, Lei HU, Xiaoyu REN et al. Fabrication of GaN-based grating by optimized inductively coupled plasma etching. Chinese Journal of Luminescence, 42, 889-895(2021).

    [11] W J HWANG, T H LEE, O H NAM et al. Thermal analysis of GaN‐based laser diode package. Physica Status Solidi C, 3, 2174-2177(2006).

    [12] Hao LIN, Deyao LI, Liqun ZHANG et al. Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes. Journal of Semiconductors, 41, 102104(2020).

    [13] J M KIM, S KIM, S B KANG et al. An analysis of transient thermal properties for high power GaN-based laser diodes. Physica Status Solidi, 7, 1801-1803(2011).

    [14] Y NAKATSU, Y NAGAO, T HIRAO et al. Blue and green InGaN semiconductor lasers as light sources for displays(2020).

    [15] M MURAYAMA, Y NAKAYAMA, K YAMAZAKI et al. Watt-Class green (530 nm) and blue (465 nm) laser diodes. Physica Status Solidi, 215, 1700513.1-1700513.5(2018).

    [16] U STRAUß, T HAGER, G BRÜDERL et al. Recent advances in c-plane GaN visible lasers(2014).

    [17] Feng LIANG, Degang ZHAO, Zongshun LIU et al. GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature. Journal of Semiconductors, 42, 112801(2021).

    [18] Shiwei FENG, Xuesong XIE, Changzhi LU et al. The thermal characterization of packaged semiconductor device(2000).

    [19] D L BLACKBURN. Temperature measurements of semiconductor devices-A review(2004).

    [20] Y T LIU, Q CAO, G F SONG et al. The junction temperature and forward voltage relationship of GaN-based laser diode. Laser Physics, 19, 400-402(2009).

    [21] Y XI, J Q XI, T GESSMANN et al. Junction and carrier temperature measurements in deepultraviolet light-emitting diodes using three different methods. Applied Physics Letters, 86, 189(2005).

    [23] H RYU. Negative characteristic temperature of GaN-based blue laser diode investigated by numerical simulation. Optical and Quantum Electronics, 49, 30(2017).

    [24] H RYU, K HA. Effect of active-layer structures on temperature characteristics of InGaN blue laser diodes. Optics Express, 16, 10849-10857(2008).

    Lei HU, Deyao LI, Jianping LIU, Aiqin TIAN, Dan WANG, Tao ZHANG, Si WU, Peng XU, Hui YANG. High-power GaN-based Blue Laser Diodes with 7.5 W of Light Output Power Under Continuous-wave Operation(Invited)[J]. Acta Photonica Sinica, 2022, 51(2): 0251209
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