Study on the Characteristics of Q-switching Nd∶YVO4 Laser with GaAs Grown at Low Temperature

Jiang Qichang; Zhuo Zhuang; Wang Yonggang; Li Jian; Su Yanli; Ma Xiaoyu; Zhang Zhigang; Wang Qingyue

Journals >Acta Photonica Sinica >Volume 35 >Issue 8 >Page 1133 > Article

Acta Photonica Sinica
Vol. 35, Issue 8, 1133 (2006)

Study on the Characteristics of Q-switching Nd∶YVO₄ Laser with GaAs Grown at Low Temperature

Jiang Qichang¹, Zhuo Zhuang^1、2、*, Wang Yonggang³, Li Jian¹, Su Yanli¹, Ma Xiaoyu³, Zhang Zhigang⁴, and Wang Qingyue⁴

Author Affiliations

¹[in Chinese]

²[in Chinese]

³[in Chinese]

⁴[in Chinese]

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DOI: Cite this Article

Jiang Qichang, Zhuo Zhuang, Wang Yonggang, Li Jian, Su Yanli, Ma Xiaoyu, Zhang Zhigang, Wang Qingyue. Study on the Characteristics of Q-switching Nd∶YVO₄ Laser with GaAs Grown at Low Temperature[J]. Acta Photonica Sinica, 2006, 35(8): 1133 Copy Citation Text

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Abstract

A diode-pumped passively Q-switched Nd∶YVO₄ laser was demonstrated by using GaAs film growing at a low temperature. The threshold power at the Q-switching is 2 W. The shortest pulse duration is 15 ns. The highest single pulse energy is 4.84 μJ and the highest peak power is 330 W. The repetition rate varies between 220 kHz and 360 kHz and the highest average output power is 1.16 W.

Keywords

GaAs grown at low temperature Laser diode pumping Nd∶YVO₄ laser Passive Q-switch

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