• Chinese Journal of Lasers
  • Vol. 35, Issue 11, 1710 (2008)
Yijian Jiang1、*, Ruyan Guo2, and A. S. Bhalla2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    Yijian Jiang, Ruyan Guo, A. S. Bhalla. Growth and dielectric properties of Ta2O5 single crystals grown by laser heated pedestal growth technique[J]. Chinese Journal of Lasers, 2008, 35(11): 1710 Copy Citation Text show less

    Abstract

    Ta2 O5 single crystals have been grown by the laser heated pedestal growth (LHPG) technique up to several centimeters length with diameter of 1.1 mm. The crystal, characterized by X-ray diffraction, dielectric measurement, and thermal expansion analysis, has Htri -Ta2 O5 symmetry. Dielectric permittivity, loss tangent along [001] and [110] direction were investigated over the temperature range from -180 °C to 100 °C. Large dielectric anisotropy in Ta2 O5 single crystal was observed. At room temperature, the dielectric permittivities (1 MHz) along [001] and [110] are 33.2 and 231.9, respectively. The reason of dielectric enhancement in Ta2 O5 crystal grown by LHPG was also discussed.
    Yijian Jiang, Ruyan Guo, A. S. Bhalla. Growth and dielectric properties of Ta2O5 single crystals grown by laser heated pedestal growth technique[J]. Chinese Journal of Lasers, 2008, 35(11): 1710
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