• Chinese Journal of Lasers
  • Vol. 31, Issue 12, 1469 (2004)
[in Chinese]*, [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effect of Absorption Character to the Reflectance of 193 nm HfO2/SiO2, Y2O3/SiO2 and Al2O3/SiO2 Multilayer Thin Films[J]. Chinese Journal of Lasers, 2004, 31(12): 1469 Copy Citation Text show less

    Abstract

    Refractive index and extinction coefficient curves of HfO2, Y2O3, Al2O3 and SiO2 were obtained from their corresponding single-layer thin films. HfO2/SiO2, Y2O3/SiO2 and Al2O3/SiO2 multilayer thin films were deposited by e-beam evaporation. Measurement results show that the experimental reflectances of HfO2/SiO2 and Al2O3/SiO2 agreed very well with the theoretical results, but the experimental result of Y2O3/SiO2 was much lower than the calculated theoretical result which told us that the absorptance performance of Y2O3 relied deeply on the deposition conditions. Deposition environment of Y2O3/SiO2 multilayer may create a large amount of non stoichiometrical Y2O3 which made the absorptance increased abruptly. In addition, absorptances of the fused silica substrate and these multilayer thin films were obtained through calculation.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effect of Absorption Character to the Reflectance of 193 nm HfO2/SiO2, Y2O3/SiO2 and Al2O3/SiO2 Multilayer Thin Films[J]. Chinese Journal of Lasers, 2004, 31(12): 1469
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