• High Power Laser Science and Engineering
  • Vol. 1, Issue 1, 01000060 (2013)
Rene Platz1、*, Gotz Erbert1, Wolfgang Pittroff1, Moritz Malchus2, Klaus Vogel1, and Gunther Trankle1
Author Affiliations
  • 1Ferdinand-Braun-Institut, Leibniz-Institut fur Hochstfrequenztechnik, Gustav-Kirchhoff-Strae 4, 12489 Berlin, Germany
  • 2University of Applied Sciences Munich, Lothstrae 34, 80335 Munich, Germany
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    DOI: 10.1017/hpl.2012.1 Cite this Article Set citation alerts
    Rene Platz, Gotz Erbert, Wolfgang Pittroff, Moritz Malchus, Klaus Vogel, Gunther Trankle. 400 μm stripe lasers for high-power fiber coupled pump modules[J]. High Power Laser Science and Engineering, 2013, 1(1): 01000060 Copy Citation Text show less
    Measured vertical far-field characteristic of the laser chip.
    Fig. 1. Measured vertical far-field characteristic of the laser chip.
    Schematic cross-sectional view of the semiconductor structure.
    Fig. 2. Schematic cross-sectional view of the semiconductor structure.
    high-power QCW laser for kW-pump modules. The chip is mounted on a plated AlN substrate. The size of the submount is .
    Fig. 3. high-power QCW laser for kW-pump modules. The chip is mounted on a plated AlN substrate. The size of the submount is .
    Simulated temperature distribution at the front facet after 1 ms pulse operation and at a dissipation power of 24 W. The laser reaches a maximum temperature rise of 10.9 K in the central emitter.
    Fig. 4. Simulated temperature distribution at the front facet after 1 ms pulse operation and at a dissipation power of 24 W. The laser reaches a maximum temperature rise of 10.9 K in the central emitter.
    Calculated variation of junction temperature with time (transient analysis) for the laser chip mounted on an AlN submount.
    Fig. 5. Calculated variation of junction temperature with time (transient analysis) for the laser chip mounted on an AlN submount.
    LI characteristic ( ms, Hz, ) of the SQW and DQW structures (, ).
    Fig. 6. LI characteristic ( ms,  Hz, ) of the SQW and DQW structures (, ).
    Output power of the DQW array at 40 A as a function of the front-facet reflectivity.
    Fig. 7. Output power of the DQW array at 40 A as a function of the front-facet reflectivity.
    LIV curve of the DQW structure with pitch.
    Fig. 8. LIV curve of the DQW structure with pitch.
    (a) Measured LI characteristic dependent on the emitter pitch (number of emitters) and (b) corresponding plot of the optical/dissipation power per stripe against the number of emitters at 35 W overall optical power.
    Fig. 9. (a) Measured LI characteristic dependent on the emitter pitch (number of emitters) and (b) corresponding plot of the optical/dissipation power per stripe against the number of emitters at 35 W overall optical power.
    Spectral characteristic of the device for different optical power levels. The spectrum is broadened due to a thermal chirp.
    Fig. 10. Spectral characteristic of the device for different optical power levels. The spectrum is broadened due to a thermal chirp.
    Lateral (a) near- and (b) far-field profiles of the DQW and SQW laser at 35 W output power ( ms, Hz, ).
    Fig. 11. Lateral (a) near- and (b) far-field profiles of the DQW and SQW laser at 35 W output power ( ms,  Hz, ).
    Dependence of the lateral far-field of the DQW structure on the emitter pitch at W ( ms, Hz, ).
    Fig. 12. Dependence of the lateral far-field of the DQW structure on the emitter pitch at  W ( ms,  Hz, ).
    COD test. Chip structure: DQW, , .
    Fig. 13. COD test. Chip structure: DQW, , .
    Aging test of 25 DQW lasers after burn-in ( A, ms, Hz). Measurement: A, ms, Hz.
    Fig. 14. Aging test of 25 DQW lasers after burn-in ( A,  ms,  Hz). Measurement:  A,  ms,  Hz.
    Aging test of 18 SQW lasers after burn-in ( A, ms, Hz). Measurement: A, ms, Hz.
    Fig. 15. Aging test of 18 SQW lasers after burn-in ( A,  ms,  Hz). Measurement:  A,  ms,  Hz.
    Stripe width$5~\mathrm{\mu} \mathrm{m} $, $2{\unicode{x2013}} 7~\mathrm{\mu} \mathrm{m} $
    Pitch$10~\mathrm{\mu} \mathrm{m} $, $14~\mathrm{\mu} \mathrm{m} $, $22~\mathrm{\mu} \mathrm{m} $
    Number of emitters40, 29, 19
    Aperture width$400~\mathrm{\mu} \mathrm{m} $
    Resonator length$4000~\mathrm{\mu} \mathrm{m} $
    Table 1. Investigated chip layouts
    $p= 10~\mathrm{\mu} \mathrm{m} $$p= 14~\mathrm{\mu} \mathrm{m} $
    $w= 5~\mathrm{\mu} \mathrm{m} $$w= 2{\unicode{x2013}} 7~\mathrm{\mu} \mathrm{m} $$w= 5~\mathrm{\mu} \mathrm{m} $$w= 2{\unicode{x2013}} 7~\mathrm{\mu} \mathrm{m} $
    SQW6.0 nm6.2 nm6.2 nm6.4 nm
    DQWn/an/a6.2 nm6.1 nm
    Table 2. 95% spectral width at  W ( ms,  Hz) and
    Rene Platz, Gotz Erbert, Wolfgang Pittroff, Moritz Malchus, Klaus Vogel, Gunther Trankle. 400 μm stripe lasers for high-power fiber coupled pump modules[J]. High Power Laser Science and Engineering, 2013, 1(1): 01000060
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